Showing papers on "Antimonide published in 1977"
Patent•
29 Mar 1977TL;DR: In this article, a gallium arsenide antimonide phosphide (GaAsSbP) was successfully grown on a liquid phase epitaxy substrate by liquid-phase epitaxy and a critical amount of phosphorus initially in growth solution was depleted with consequent grading of lattice constant and bandgap in the epitaxially grown layer.
Abstract: Gallium arsenide antimonide phosphide (GaAsSbP) has been successfully grown on a gallium arsenide substrate by liquid phase epitaxy. A critical amount of phosphorus initially in growth solution is depleted with consequent grading of lattice constant and bandgap in the epitaxially grown layer. The substrate and graded layer as a subassembly are well suited for use in electronic devices such as double heterostructure lasers, light-emitting diodes, Schottky barrier diodes, and p-n junction photodiodes in the near-infrared low loss region of optical fibers.
14 citations
TL;DR: In this paper, the magnetic excitation spectrum of NdSb has been studied by neutron inelastic scattering and the experimental data are satisfactory described in terms of a cubic crystal field, an isotropic Heisenberg exchange and a large quadrupolar exchange interaction.
Abstract: The magnetic excitation spectrum of NdSb has been studied by neutron inelastic scattering. The experimental data are satisfactory described in terms of a cubic crystal field, an isotropic Heisenberg exchange and a large quadrupolar exchange interaction.
3 citations