We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

The structure and properties of metal-semiconductor interfaces

Recent advances in nonsilica fiber technology have prompted the development of suitable materials for devices operating beyond 155 mu m The III-V ternaries and quaternaries (AlGaIn)(AsSb) lattice matched to GaSb seem to be the obvious choice and have turned out to be promising candidates for high speed electronic and long wavelength photonic devices Consequently, there has been tremendous upthrust in research activities of GaSb-based systems As a matter of fact, this compound has proved to be an interesting material for both basic and applied research At present, GaSb technology is in its infancy and considerable research has to be carried out before it can be employed for large scale device fabrication This article presents an up to date comprehensive account of research carried out hitherto It explores in detail the material aspects of GaSb starting from crystal growth in bulk and epitaxial form, post growth material processing to device feasibility An overview of the lattice, electronic, transport, optical and device related properties is presented Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as for device applications are addressed These include the role of defects and impurities on the structural, optical and electrical properties of the material, various techniques employed for surface and bulk defect passivation and their effect on the device characteristics, development of novel device structures, etc Several avenues where further work is required in order to upgrade this III-V compound for optoelectronic devices are listed It is concluded that the present day knowledge in this material system is sufficient to understand the basic properties and what should be more vigorously pursued is their implementation for device fabrication (C) 1997 American Institute of Physics

The physics and technology of gallium antimonide: An emerging optoelectronic material

Integrated optics and new wave phenomena in optical waveguides

Measurements of lattice parameters and compositions for In1−xGaxAsyP1−y lattice matched to InP demonstrate the validity of Vegard’s law for this quaternary. The measured compositional dependence of the band gap shows a bowing parameter smaller than predicted from the previously measured band gaps of the four constituent ternaries.

Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−y lattice matched to InP

The first operation of an integrated p-i-n-photodiode/f.e.t.-amplifier on a single wafer of In0.53Ga0.47As grown lattice matched to an InP substrate is reported.

Integrated In0.53Ga0.47As p-i-n f.e.t. photoreceiver

We report a Raman study of the lattice vibrations of the quaternary compound In1−xGaxAsyP1−y over the whole range of compositions lattice‐matched to InP. The major bands in the spectra show a pseudo‐two‐mode behavior involving the optical phonons of InGaAs and InP. A low‐frequency structure is attributed to disorder‐induced scattering by acoustical vibrations. Weaker bands are assigned to Ga‐P and In‐As pair vibrations.

Lattice vibrations of In1−xGaxAsyP1−y quaternary compounds

A two‐phase supercooled solution method is described for the LPE growth of In1−xGaxAsyP1−y on 〈100〉 InP over the entire range of lattice‐matched compositions, 0⩾y<1, 0?x<0.47. Liquid and solid compositions, distribution coefficients, and band‐gap data which may be used to design specific devices are presented.

Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μm

Measurements and calculations of the GaInAsSb phase diagram near 530°C are reported. Epitaxial growth of compositions lattice-matched to GaSb is demonstrated over the range 0 ≤ x ≲ 0.22 before encountering the expected miscibility gap. Photoluminescence measurements yield bandgap energies from 0.73 eV for GaSb down to 0.53 eV at x = 0.22, indicating the potential application of these materials for optoelectronic devices operating at wavelengths between 1.71μm and 2.33μm.

Liquid phase epitaxial Ga 1-x In x As y Sb 1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range

A microwave nonlinear susceptibility analogous to the optical and electro-optical nonlinear susceptibilities is investigated in a number of acentric ferroelectric and semiconductor crystals. Contributions from ionic nonlinearities result in enormously larger nonlinear coefficients in some materials than any known for the optical or electro-optical effects. An interpretation is presented in terms of a relationship between the nonlinear coefficients and the electronic and ionic linear susceptibilities.

M. A. Pollack

Papers

Integrated In0.53Ga0.47As p-i-n f.e.t. photoreceiver

Lattice vibrations of In1−xGaxAsyP1−y quaternary compounds

Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μm

Liquid phase epitaxial Ga 1-x In x As y Sb 1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range

Microwave Nonlinear Susceptibilities Due to Electronic and Ionic Anharmonicities in Acentric Crystals