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Showing papers on "Bandgap voltage reference published in 1974"


Journal ArticleDOI
A. Brokaw1
01 Dec 1974
TL;DR: In this paper, a two-transistor cell in a three-terminal 2.5-V monolithic reference is described, which uses collector current sensing to eliminate errors due to base current.
Abstract: A new configuration for realization of a stabilized bandgap voltage is described. The new two-transistor circuit uses collector current sensing to eliminate errors due to base current. Because the stabilized voltage appears at a high impedance point, the application to circuits with higher output voltage is simplified. Incorporation of the new two-transistor cell in a three-terminal 2.5-V monolithic reference is described. The complete circuit is outlined in functional detail together with analytical methods used in the design. The analytical results include sensitivity coefficients, gain and frequency response parameters, and biasing for optimum temperature performance. The performance of the monolithic circuit, which includes temperature coefficients of 5 ppm//spl deg/C over the military temperature range, is reported.

523 citations


Patent
04 Mar 1974
TL;DR: In this paper, a voltage divider trimming in a circuit in which a common current supply feeds a first branch containing one or more Zener diodes and a second branch containing a voltage division composed of ohmic resistances, from the tap of which the output voltage is taken, is presented.
Abstract: A temperature stability of a high order is obtained by voltage divider trimming in a circuit in which a common current supply feeds a first branch containing one or more Zener diodes and a second branch containing a voltage divider composed of ohmic resistances, from the tap of which the output voltage is taken, by provision of a circuit configuration meeting one design criterion and trimming an output voltage divider to meet, at a single reference temperature, another design criterion and thus to set both the designed output voltage and the designed temperature coefficient, independently of the scatter of the characteristics of the diodes in the circuit.

21 citations


Patent
28 Feb 1974
TL;DR: In this paper, a hysteresis circuit using MOS (metal oxide semiconductor) field effect transistors for switching output voltage levels in response to different input voltage levels was proposed.
Abstract: A hysteresis circuit using MOS (metal oxide semiconductor) field effect transistors for switching output voltage levels in response to different input voltage levels, wherein a voltage dividing circuit is connected between the input and output terminals of the hysteresis circuit; and input voltage levels switching output voltage levels are controlled in response to an output voltage from the voltage dividing circuit.

14 citations


Patent
01 Nov 1974
TL;DR: In this article, a bandwidth limit sensing circuit for a step voltage regulator adapted to maintain its output voltage within upper and lower bandwidth limits derives a lower limit reference potential at the wiper of a bandwidth setting potentiometer connected in a circuit across a reference voltage source.
Abstract: A bandwidth limit sensing circuit for a step voltage regulator adapted to maintain its output voltage within upper and lower bandwidth limits derives a lower limit reference potential at the wiper of a bandwidth setting potentiometer connected in a circuit across a reference voltage source and an upper limit reference potential at the output of a unity gain operational amplifier inverter having inputs coupled to the potentiometer wiper and to the reference voltage source. First and second voltage comparators respectively compare the upper and lower limit reference potentials to a sample voltage proportional to the regulator output voltage.

5 citations