Journal ArticleDOI
A simple three-terminal IC bandgap reference
A. Brokaw
- Vol. 9, Iss: 6, pp 388-393
TLDR
In this paper, a two-transistor cell in a three-terminal 2.5-V monolithic reference is described, which uses collector current sensing to eliminate errors due to base current.Abstract:
A new configuration for realization of a stabilized bandgap voltage is described. The new two-transistor circuit uses collector current sensing to eliminate errors due to base current. Because the stabilized voltage appears at a high impedance point, the application to circuits with higher output voltage is simplified. Incorporation of the new two-transistor cell in a three-terminal 2.5-V monolithic reference is described. The complete circuit is outlined in functional detail together with analytical methods used in the design. The analytical results include sensitivity coefficients, gain and frequency response parameters, and biasing for optimum temperature performance. The performance of the monolithic circuit, which includes temperature coefficients of 5 ppm//spl deg/C over the military temperature range, is reported.read more
Citations
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Design with Operational Amplifiers and Analog Integrated Circuits
TL;DR: In this article, the authors present a design-oriented course for operational amplifiers and analog ICs, which includes additional problems, more in-depth coverage of negative feedback, more effective layout, updated technology (current feedback and folded-cascode amplifiers, and low-voltage amplifiers), and increased topical coverage (current-feedback amplifier, switching regulators and phase-locked loops).
Journal ArticleDOI
A Portable 2-Transistor Picowatt Temperature-Compensated Voltage Reference Operating at 0.5 V
TL;DR: The proposed voltage reference for use in ultra-low power systems, referred to as the 2T voltage reference, which has been demonstrated in silicon across three CMOS technologies, is proposed, showing the design exhibits comparable spreads in TC and output voltage to existing voltage references in the literature.
Journal ArticleDOI
A low-voltage low-power voltage reference based on subthreshold MOSFETs
TL;DR: In this paper, a low-voltage low-power CMOS voltage reference independent of temperature is presented based on subthreshold MOSFETs and on compensating a PTAT-based variable with the gate-source voltage of a sub-threshold MCFET, which exhibits an average voltage of about 295 mV with an average temperature coefficient of 119 ppm/spl deg/C.
Journal ArticleDOI
Accurate analysis of temperature effects in I/SUB c/V/SUB BE/ characteristics with application to bandgap reference sources
TL;DR: In this article, the inaccuracy of the analyses commonly used for predicting the temperature behavior of transistors and the output of bandgap reference sources is pointed out, and new accurate formulas are derived by taking into account the nonlinearity in this variation.
Journal ArticleDOI
Artificial parameter homotopy methods for the DC operating point problem
TL;DR: The application of globally convergent probability-one homotopy methods to various systems of nonlinear equations that arise in circuit simulation is discussed and the theoretical claims of global convergence for such methods are substantiated.
References
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Journal ArticleDOI
New developments in IC voltage regulators
TL;DR: A temperature-compensated voltage reference that provides numerous advantages over zener diodes is described along with the implementation of thermal overload protection for monolithic circuits.
Journal ArticleDOI
A precision reference voltage source
TL;DR: In this paper, a reference voltage source of 10 V based on the gap voltage of silicon is described, and the reference part of the circuit is an integrated circuit, and thin-film resistors with a small relative temperature coefficient are used.
Journal ArticleDOI
Silicon Transistor Biasing for Linear Collector Current Temperature Dependence
TL;DR: The silicon transistor base bias voltage necessary for linearly increasing collector current with temperature is derived and a constant voltage is shown to be adequate in practical applications, enabling temperature-independent small-signal diode conductance to be simply obtained.