Showing papers on "Carbon nanotube field-effect transistor published in 1985"
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25 Apr 1985TL;DR: In this article, a film field effect transistor is proposed to operate at fast switching rates for use in video display applications, where the transistor includes a body of silicon semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material.
Abstract: There is disclosed a film field effect transistor which can be operated at fast switching rates for use, for example, in video display applications. The transistor includes a body of silicon semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistor comprise rectifying contacts formed on the body of silicon semiconductor material. Also disclosed are a method of making the transistor and an electronically addressable array system utilizing the transistor to advantage.
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