Patent
Thin film field effect transistor and method of making same
TLDR
In this article, a film field effect transistor is proposed to operate at fast switching rates for use in video display applications, where the transistor includes a body of silicon semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material.Abstract:
There is disclosed a film field effect transistor which can be operated at fast switching rates for use, for example, in video display applications. The transistor includes a body of silicon semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistor comprise rectifying contacts formed on the body of silicon semiconductor material. Also disclosed are a method of making the transistor and an electronically addressable array system utilizing the transistor to advantage.read more
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Patent
Semiconductor device and method for forming the same
TL;DR: In this article, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface Hydrogen is introduced into The active layer, a thin film comprising SiO x N y is formed to cover the active layer and then a gate insulating film comprising silicon oxide film formed on the thin film.
Patent
Electro-optical device
TL;DR: In this article, an electro-optical device having a plurality of pixels, including a majority of EL elements, provides a gray-scale display by controlling a period of time at which the plurality of the EL elements emit light in one frame period, and a polarity of an EL driving voltage, which is a difference between the potentials applied to the first and second electrodes, is inverted for each one-frame period.
Patent
Semiconductor display device
Shunpei Yamazaki,Jun Koyama +1 more
TL;DR: In this article, the luminance of the EL elements of each in the display pixels is controlled in accordance with the amount of electric current flowing in each of the diodes, which is a function of the environment.
Patent
Integrated circuit device and fabrication using metal-doped chalcogenide materials
Jiutao Li,Allen McTeer +1 more
TL;DR: In this article, metal-doped chalcogenide layers are formed by using a plasma to induce diffusion of metal into a chalkogenide layer concurrently with metal deposition, which reduces contamination concerns and physical damage resulting from moving the device substrate from tool to tool.
Patent
Electro-optical device and method of driving the same
TL;DR: An active matrix display device for suppressing voltage variation ΔV due to off-operation of a gate pulse, including TFTs and picture-element electrodes, was proposed in this paper. But it was not shown in practice.
References
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Patent
Integrated circuit compatible thin film field effect transistor and method of making same
TL;DR: In this article, integrated circuit compatible thin film field effect transistors which can be fabricated at low temperatures and operated at fast switching rates for use, for example, in video rate applications are disclosed.
Patent
Liquid crystal display with vertical non-single crystal semiconductor field effect transistors
TL;DR: In this paper, the first, second and third semiconductor layers are formed of a non-single crystal semiconductor doped with a dangling bond neutralizer, and the second semiconductor layer has a higher resistivity than the first and third.
Patent
Method to improve the reverse leakage characteristics in metal semiconductor contacts
TL;DR: In this paper, a method for improving the reverse leakage characteristics in metal semiconductor contact devices is disclosed, and the process embodies ionic plasma bombardment as a step in producing improved reverse bias current voltage characteristics.