Showing papers on "Gallium nitride published in 1979"
Patent•
16 Feb 1979TL;DR: An electroluminescent semiconductor device as discussed by the authors consists of a monocrystalline substrate, an n-type gallium nitride layer on the substrate, and a surface electrode for contacting the active layer.
Abstract: An electroluminescent semiconductor device includes a monocrystalline substrate, an n-type gallium nitride layer on the substrate, an active gallium nitride layer on the n-type layer which is doped to at least full compensation of the natural donor impurities with acceptor impurities, a surface electrode for contacting the active layer and means for contacting the n-type layer. A part of the n-type layer, which extends parallel to the active layer and adjoins the active layer, is doped to less than full compensation by means of the acceptor impurities, and the net concentration of donor impurities is smaller than the concentration of natural impurities and is substantially homogeneous in the layer portion. Electroluminescent semiconductor devices in accordance with the invention feature improved efficiency as well as better reproducibility than prior art devices.
47 citations
Patent•
17 Oct 1979
TL;DR: In this article, the authors proposed a method to obtain an epitaxially grown layer with satisfactory characteristics by selecting a face inclined by 0.5W4° from the low index face of a substrate crystal for the face orientation of the crystal.
Abstract: PURPOSE: To obtain an epitaxially grown layer with satisfactory characteristics by selecting a face inclined by 0.5W4° from the low index face of a substrate crystal for the face orientation of the crystal in the epitaxial growth of gallium nitride on the substrate. CONSTITUTION: The titled growing method is characterized by the selection of a face inclined by 0.5W4° from the low index face of a substrate crystal for the face orientation of the crystal. When the (0001) face of an α-Al 2 O 3 single crystal or hexagonal system SiC and the (111) face of spinel is used as a substrate, a face inclined by 0.5W4° in the [10-10] or [11-20] direction and [110] or [100] direction, respectively is used. By growing gallium nitride using such a substrate crystal with off-angle, an epitaxial layer with satisfactory characteristics is obtd. COPYRIGHT: (C)1981,JPO&Japio
27 citations
Patent•
17 Dec 1979
TL;DR: In this paper, the authors proposed a method to isolate the light of gallium nitride light emitting element array by forming gallium oxide epitaxial layers on a substrate forming a rough surface region in a grid shape wherein electrodes are provided in grooves by forming the groove by etching.
Abstract: PURPOSE:To isolate the light of gallium nitride light emitting element array by forming gallium nitride epitaxial layers on a substrate forming a rough surface region in a grid shape wherein electrodes are provided in grooves by forming the grooves by etching. CONSTITUTION:Scratches 52 are provided on the surface of a sapphire substrate 12 at necessary pitches by scriber or the like to grow gallium nitride N type layers 22 and semi-insulating layers (i layers) 32 by a vapor growth method. At that time, layers having different characters are grown at the parts on the scratches 52. Next, on performing etching by thermal phosphoric acids or a thermal supersaturated alkali solution, the part of the layers 72 will be melted due to the liability to etching and the other parts will be remained. N side electrodes 62, i side electrodes 42 are formed by mask evaporation or the like and the N side of each element isolated by the N side electrodes 62 is connected each other and at the same time, masking is applied so that the light generated by an i-N junction may have no influence on the adjacent element.
6 citations