Showing papers on "Graphene oxide paper published in 1986"

Method for producing recessed field oxide with improved sidewall characteristics

Abstract: A method for producing field oxide in a silicon substrate by forming a thin oxide layer over the surface of the substrate, forming a thin nitride layer over the thin oxide layer, forming a thick oxide over the thin nitride layer, forming a thick nitride layer over the thick oxide layer; patterning all four of the layers to espose the surface of the substrate where the field oxide is to be formed; and growing the field oxide. Preferably, before the field oxide is grown, trenches are formed into the substrate so that the upper surfaces of the field oxide are substantially planar with the upper surfaces of the substrate. The thin oxide layer minimizes bird beak formation, and eases the removal of the oxide/nitride/oxide/nitride layers. The resultant structure is both planar and bird's beak-free, and is therefore well suited to producing VLSI components having dimensions less than 0.5 microns.

Oxidation of the InSb surface at room temperature

Abstract: The formation and composition of room-temperature surface oxides on (110) orientated InSb samples was studied with ESCA and AES. The oxides are composed of a mixture of In2O3 and Sb2O5. It is shown that the Sb oxide is Sb2O5 and not Sb2O3, as has been previously generally assumed. Four surface-preparation techniques were compared: free etching, mechanical polishing, chemo-mechanical polishing and anodic oxidation. Chemo-mechanical polishing and free etching yield comparable oxide thicknesses of about 30 AA. Mechanical polishing produces a 100 AA thick disturbed oxide layer. Anodic oxidation allows a choice of the thickness but introduces a strong carbon contamination. The first monocell layer of natural oxide grows very fast, within 80 s a 15 AA layer has formed. Thereafter the oxidation is diffusion controlled and much slower. From renormalisation curves it is concluded that the oxide mainly consists of In2O3 with some Sb2O5. The In oxide stays near the oxide/bulk interface and finally after some 25 days stops further oxidation, while the Sb oxide moves towards the oxide/air interface. In contrast to thermal oxides no Sb layer is found at the oxide/bulk interface.

Oxide bronze materials

Abstract: An oxide bronze host material is a solid solution of a first oxide component comprising molybdenum oxide (MoO 3 ), tungsten oxide (WO 3 ), zirconium oxide (ZrO), niobium oxide (Nb 2 O 5 ) or any two or more thereof and a second oxide component comprising vanadium oxide (V 2 O 5 ) and/or titanium oxide (TiO 2 ), the formula ratio of the first and second oxide components being selected such that the host material is capable of accepting guest atoms when incorporated in an electrochemical cell, said guest atoms altering the spectral characteristics of the host material without producing substantial visible color change in thin layers of the host material. Such a material may be used as a thin layer (12) in an electrochemical variable optical density window further including electrode layers (11, 15) on glass supports (10, 16) and an electrochromic oxide bronze layer (14) spaced from the layer (12) by an electrolyte layer (13a, 13b).