Showing papers on "Insulated-gate bipolar transistor published in 1972"
TL;DR: In this paper, a design theory for transistor frequency multipliers and power amplifiers is presented, which is dependent upon two main assumptions, 1) that intrinsic base region behavior may be represented by a simple charge-control form model, and 2) that depletion layer charging current effects may be neglected initially and included when necessary as a perturbation of the analysis.
Abstract: A design theory for transistor frequency multipliers and power amplifiers is presented. The analytical approach is dependent upon two main assumptions, 1) that intrinsic base region behavior may be represented by a simple charge-control form model, and 2) that depletion layer charging current effects may be neglected initially and included when necessary as a perturbation of the analysis. The intrinsic base region is represented by a `partial sinusoid' model of base current flow during the conduction period of the emitter junction. This model is a simple representation of a complex process and is chosen on the basis of adequacy of characterization of the response of actual vices under practical operating conditions, together with a simple analytical form. The analysis of transistor frequency multiplier and power amplifier operation is developed in terms of the model and design relationships are presented. Results showing good agreement between the theory and measured data are given.
14 citations
TL;DR: A novel complementary monolithic bipolar transistor structure has been developed that allows a pair of high current gain and very low saturation resistance n-p-n and p-n-p transistors to be fabricated on the same chip.
Abstract: A novel complementary monolithic bipolar transistor structure has been developed. By adding one extra diffusion to the standard monolithic bipolar transistor process a pair of high current gain and very low saturation resistance n-p-n and p-n-p transistors can be fabricated on the same chip. High sheet resistances are also present in this structure.
2 citations
TL;DR: A modification of the Sallen-Key technique, applicable to networks with two or more feedback branches, helps to reduce the load imposed on the amplifier by the passive section of the filter.
Abstract: The use of micropower amplifiers as gain elements of active filters is advantageous in applications that emphasize power economy or stability of the offset current. A modification of the Sallen-Key technique, applicable to networks with two or more feedback branches, helps to reduce the load imposed on the amplifier by the passive section of the filter.