Showing papers on "Lead telluride published in 1974"
TL;DR: In this article, a servo-control system for the automatic growth of lead telluride, indium phosphide, gallium arsenide, and gallium sulfide is described.
55 citations
Patent•
01 Aug 1974
TL;DR: In this article, a thin-film thermistor was proposed, in which a composition of lead telluride plus 5% cerium is sputtered on to a polyimide film after which electrodes are deposited thereon with the width of lead-telluride composition remaining uncovered being controlled to control the thermistor characteristics.
Abstract: A thin film thermistor and a method of making such a thermistor in which a composition of lead telluride plus 5% cerium is sputtered on to a polyimide film after which electrodes are deposited thereon with the width of lead telluride composition remaining uncovered being controlled to thereby control the thermistor characteristics.
12 citations
TL;DR: PbTe-Ge pn heterojunctions were formed by evaporating PbTe layers on Ge substrates kept at constant temperature as discussed by the authors, and the electrical characteristics are discussed, indicating that the static potential drop is essentially supported by the Ge side in all diodes.
Abstract: PbTe–Ge p‐n heterojunctions were formed by evaporating PbTe layers on Ge substrates kept at constant temperature. The electrical characteristics are discussed, indicating that the static potential drop is essentially supported by the Ge side in all diodes. This causes a peaking of the spectral photoresponse near the Ge energy gap.
6 citations