Showing papers on "Lead telluride published in 1994"
TL;DR: In this paper, a new class of far-infrared photodetectors based on lead-tin tellurides doped with group III impurities is presented, which provides an internal signal integration resulting in a considerable increase in signal-to-noise ratio.
27 citations
Journal Article•
TL;DR: In this article, the heat capacities of lead selenide and lead telluride in the temperature range 350-580 K using DSM-2M differential calrimeter were investigated.
Abstract: The thermodynamic functions of lead selenide and telluride presented in handbooks are based on measurements of low-temperature heat capacities of these compounds. The heat capacities were measured in an adiabatic calorimeter in the temperature ranges 25-240 K for lead selenide single crystals and 20-260 K for lead telluride single crystals. The conductivity of the samples at 290 K was measured to be {approximately}500 and {approximately}100 S/cm, respectively, and the charge-carrier concentration was {approximately}10{sup 18} cm{sup -3}. However, no spectrochemical data were reported. The results of these measurements are doubtful because the heat capacities are virtually temperature-independent in the range of 210-240 K for lead selenide and 210-260 for lead telluride. We conducted an investigation on the heat capacities of lead selenide abd lead telluride in the temperature range 350-580 K using as DSM-2M differential calrimeter.
2 citations
Journal Article•
2 citations
Journal Article•
TL;DR: In this article, the electrical state of Ge in PbTe using a method of heterogeneous equilibria is elucidated using a comparative analysis of experimental and calculated dependences of off-stoichiometry on partial pressures of components (p{sub Pb} and p{sub GeTe}) at a fixed temperature.
Abstract: Above 820 K, (Pb{sub 1-x}Ge{sub x}){sub 1-y}Te{sub y} solid solutions are stable in the composition range of 0 < x < 1; their formation is due to isomorphic, isovalent substitution of germanium for lead in a face-centered cubic structure. Generally, germanium is in two oxidation states, +2 and +4, whereas the oxidation state of lead is mainly +2. Therefore, it is reasonable to suggest that, upon dissolution in PbTe, germanium atoms may act as donors. The aim of this work is to elucidate the electrical state of Ge in PbTe using a method of heterogeneous equilibria. Essentially, the method consists in the comparative analysis of experimental and calculated dependences of off-stoichiometry on partial pressures of components (p{sub Pb} and p{sub GeTe}) at a fixed temperature (930 K, in our case).
1 citations
TL;DR: In this article, the authors presented a new class of far infrared photodetectors based on the lead-tin tellurides doped with the group III impurities, which provided an internal signal integration resulting in a considerable increase in the signal-to-noise ratio.
Abstract: We present the new class of the far infrared photodetectors based on the lead-tin tellurides doped with the group III impurities. The persistent photoconductivity effect appearing in these materials provides an internal signal integration resulting in a considerable increase in the signal-to-noise ratio. The techniques of the photomemory quenching are discussed. In some regime of quenching the effect of giant quantum efficiency stimulation has been observed. The possibility of generation of the photoinduced spatially nonequilibrium states provides the physical evidence for the construction of an integrating “continuous” focal-plane array based on Pb1−xSnxTe(In).