Showing papers on "NQS published in 1989"
TL;DR: In this paper, the authors compared the 1-D numerical solution to the current-continuity equation, 2-D device simulation (PISCES), and the quasistatic (QS) results.
Abstract: The long-channel MOSFET model is based on an approximate solution to the nonlinear current-continuity equation in the channel. The model includes the large-signal transient and the small-signal AC analyses, although only the transient model is reported here. Comparisons have been made between this model and the 1-D numerical solution to the current-continuity equation, 2-D device simulation (PISCES), and the quasistatic (QS) results. The channel-charge partitioning scheme in the charge-based QS models is shown to be inadequate for the fast transient. This model does not use a charge-partitioning scheme and the currents are dependent on the history of the terminal voltages, not just the instantaneous voltages and their derivatives. For the slow signals (compared to the channel transit time), the nonquasistatic (NQS) model is reduced to the quasistatic 40/60 channel-charge partitioning scheme. The CPU time required for this model is about two to three times longer than that of conventional MOSFET models in SPICE. >
33 citations
26 Mar 1989
TL;DR: In this paper, a novel derivation of the partitioned-charge-based (PCB) bipolar junction transistor (BJT) model is presented, which allows for an arbitrary partitioning of the excess charge in the quasi-neutral base (QNB) and thus generalizes the PCB methodology.
Abstract: By taking moments of the hole (electron) continuity equation, a novel derivation of the partitioned-charge-based (PCB) bipolar junction transistor (BJT) model is presented. The derivation allows for an arbitrary partitioning of the excess charge in the quasi-neutral base (QNB) and thus generalizes the PCB methodology. With this novel approach, an optimal nonquasi-static (NQS) BJT equivalent network representation, within the PCB framework, can be obtained. >