Showing papers on "Plasma-enhanced chemical vapor deposition published in 1975"

Chemical Processes in Vapor Deposition of Silicon I . Deposition from and Etching by

Abstract: Chemical processes occurring in the vapor deposition of Si from SiCl/sub 2/H/sub 2/ and in the etching of Si by HCl were studied by means of a mass spectrometer coupled to the chemical-vapor-deposition reactor. This setup was successfully used for the qualitative and quantitative analysis of the composition of the vapor phase in the Si-Cl-H system. Species found in the vapor phase were H/sub 2/, HCl, SiCl/sub 2/, SiCl/sub 2/H/sub 2/, SiCl/sub 3/H, and SiCl/sub 4/, and their partial pressures were measured as a function of temperature, Cl/H ratio, and of the chemical nature of the initial gaseous mixture entering the reactor. The experimentally determined partial pressures were compared with the equilibrium partial pressures of vapor species, calculated from the newest thermochemical data for the Si-Cl-H system. Based on these results, the nature and the extent of chemical processes in systems studied are discussed. (WDM)

Continuous chemical vapor deposition reactor

Abstract: Disclosed is a vapor deposition reactor comprising a series of individual gas cells respectively isolated from each other and containing a particular reactive or non-reactive gas required for one stage in a deposition process. Each cell is provided with an independent temperature control. A substrate is mounted on a carrier and transported through the series of individual cells so that vapor depositions or other related processes may be conducted or performed upon the substrate. Chemical vapor deposition processes such as growth of epitaxial layer, deposition of polycrystalline silicon, nitride, oxide or metals on a substrate may be performed within the reactor. The cells are isolated by viscous loss seals formed by the propinquity of restricted openings in the reactor to substrate carrier configuration.

Method of optical thin film coating

Abstract: Disclosed is an improved optical thin film coating system comprising all essential elements of resistive and electron beam evaporation systems, chemical vapor deposition systems and reactive plasma deposition systems. Sequences of cleaning and deposition processes which previously required moving substrates through several chambers are performed in a single vacuum chamber. The evaporative sources also efficiently vaporize solid materials to provide reactive gases for reactive plasma and chemical vapor deposition processes, which were previously difficult or impossible to perform. Substrate movement, masking, and monitoring means previously used with evaporative sources are used to control thickness and uniformity of films deposited by chemical vapor and reactive plasma processes, to provide optical quality films.