Showing papers on "Silicon on insulator published in 1972"

The combination of silicon nitride and aluminum anodization for semiconductor device passivation

Abstract: The combination of silicon nitride and barrier anodization of the aluminum interconnects serves as excellent passivation for bipolar silicon devices, even under conditions of massive ionic contamination at temperatures as high as 400°C. This combination removes the restriction that silicon nitride positively overlap the edges of all contact cuts and thus results in savings in device area. In addition, the processing complexity is somewhat reduced in that the silicon nitride can be delineated by a self-aligning anodization technique.