Showing papers on "Static induction transistor published in 2022"
TL;DR: In this article , an analytical model of a hydrogenated amorphous silicon (a-Si:H) junction field effect transistor (JFET) based on a p-type/intrinsic/n-type stacked structure is presented.
3 citations
TL;DR: In this article , the authors studied bipolar junction transistors and showed that the transistor actually functions as a current-controlled current source, and that both majority and minority carriers are involved.
Abstract: We studied bipolar junction transistors. We will see that the bipolar junction transistor, often referred to by its short name, transistor, actually functions as a current-controlled current source. We will also see that in the current generation of bipolar junction transistors, both majority and minority carriers are involved. For this reason, they gave this name to this type of transistor. In order to get enough information about this part, in the first two parts we will examine the construction and working method of the transistor. After that, we dedicate sections to how the transistor is placed in different combinations and the characteristics of the transistor in each combination.
TL;DR: The insulated gate bipolar transistor (IGB) as discussed by the authors is a hybrid of field effect and bipolar transistors, which has found wide application in high power and highvoltage devices.
Abstract: Insulated-gate bipolar transistor is a cunningly composed hybrid of field-effect and bipolar transistors. At the same time, it has adopted the main advantages of the two main types of transistors and has found wide application in high-power and high-voltage devices.
TL;DR: In this article , a novel three-input field effect transistor with parallel switching function (PSF-TiFET) is proposed, which consists of a vertical subchannel and two horizontal subchannels.
Abstract: In this article, a novel three-input field effect transistor with parallel switching function (PSF-TiFET) is proposed. The channels of the new device consist of a vertical subchannel and two horizontal subchannels. The two horizontal subchannels are manufactured over the vertical subchannel by using smart-cut process. The top gate is located above the two horizontal subchannels. The front gate and back gate below the two horizontal subchannels are located on the two sides of the vertical subchannel, respectively. Each of the all three gates has roughly the same control area on the channel, and thus, the all three gates have roughly the same effect on the device channel. Due to its special structure, the new device is logically equivalent to three conventional single-input transistors in parallel. Compared with the traditional field effect transistors with a single-input terminal, the new device can be used to simplify the circuit with the reduced transistor number. The impacts of body thickness, gate oxide thickness, and work function on device performance are investigated, and then the device optimizations are carried out. The current characteristic of the device is theoretically analyzed. Silvaco TCAD simulations show that the theoretical analysis agrees well with the TCAD simulation results. This work explores the feasibility of multi-input devices, which would facilitate its development.