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A. Belaidi
Researcher at École Normale Supérieure
Publications - 15
Citations - 169
A. Belaidi is an academic researcher from École Normale Supérieure. The author has contributed to research in topics: Positron & Electronic band structure. The author has an hindex of 7, co-authored 15 publications receiving 169 citations.
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Positron Annihilation in Si and Ge
TL;DR: In this paper, a computational technique is developed to evaluate electron and electron-positron momentum densities in silicon and germanium and the use of these to provide means of interpreting the k-space densities obtained by experimentalis's using the two-dimensional angular correlation of positron annihilation radiation technique (2D ACAR).
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Positron Distribution in Semiconductors
TL;DR: The positron distribution of charge along the (111) direction was calculated for elemental and compound semiconductors as discussed by the authors, and it was shown that the positron has a strong affinity for one sort of atom in binary semiconductor.
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Electron and Positron Distribution for the Plane (1110) in Si and GaAs
TL;DR: In this paper, the electron and positron charge densities are calculated as a function of position in the unit cell for two diamond and zinc-blende semiconductors, using wave functions derived from nonlocal pseudopotential band structure calculations for the electronic part, and the positron wave functions are calculated for single-particle approximation in manner which is free of any theoretical assumptions.
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Electron and positron distributions in grey tin
TL;DR: In this article, electron and positron charge densities are calculated as a function of position in the unit cell for grey tin, α-Sn. Wavefunctions are used derived from pseudopotential band structure calculations and the independent particle approximation (IPM), respectively, for the electrons and positrons.
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Conduction band-edge charge densities in II–VI compound semiconductors
TL;DR: In this article, the conduction band-edge charge densities of six zinc-blende II-VI compound semiconductors (CdTe, CdSe and CdS) were calculated using the empirical pseudopotential method (EPM) at selected Γ 1 c, X 1 c and X 3 c points.