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A. Ben-Amar
Researcher at Ben-Gurion University of the Negev
Publications - 8
Citations - 180
A. Ben-Amar is an academic researcher from Ben-Gurion University of the Negev. The author has contributed to research in topics: Optogalvanic effect & Neon. The author has an hindex of 6, co-authored 8 publications receiving 180 citations.
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Pulsed resonant optogalvanic effect in neon discharges
TL;DR: In this article, the pulsed resonant optogalvanic effect was investigated in a neon hollow cathode discharges utilizing a nitrogen pumped dye laser, and the experimental results were correlated with a four states phenomenological model of pulsed optogalanic effect taking into account lumped relevant levels of the 3s and 3p manifolds of neon.
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Inverted population observation using pulsed optogalvanic effect
TL;DR: In this paper, the use of pulsed optogalvanic effect in the detection of inverted population was reported, where an early positive part of the optogalanic signal is shown to be characteristic of a population inversion and is measured using a high temporal resolution from the start of the laser pulse.
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Penning ionization spectroscopy using the optogalvanic effect
TL;DR: The optogalvanic effect was proposed and demonstrated as a new technique for quasiresonant Penning ionization spectroscopy in a discharge plasma of mixtures of rare gases and metal vapors as mentioned in this paper.
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Observation of Penning ionization in Sr/Ne discharge by the optogalvanic effect.
TL;DR: A study of the pulsed optogalvanic effect in a Sr/Ne hollow cathode tube for Penning ionization spectroscopy in this system is described.
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Optogalvanic spectroscopy of quasi‐resonant Penning ionization
TL;DR: In this paper, the pulsed optogalvanic effect on the neon 1si→2pj transitions was used to detect the quasi-resonant Penning ionization in a Ne-Ca discharge.