IEEE Antennas and Wireless Propagation Letters

A self-doped conducting polymer “polyanthranilic acid”: An efficient corrosion inhibitor for mild steel in acidic solution

The conductivity of an $n$-type semiconductor has been calculated in the region of low-temperature $T$ and low impurity concentration ${n}_{D}$. The model is that of phonon-induced electron hopping from donor site to donor site where a fraction $K$ of the sites is vacant due to compensation. To first order in the electric field, the solution to the steady-state and current equations is shown to be equivalent to the solution of a linear resistance network. The network resistance is evaluated and the result shows that the $T$ dependence of the resistivity is $\ensuremath{\rho}\ensuremath{\propto}\mathrm{exp}(\frac{{\ensuremath{\epsilon}}_{3}}{\mathrm{kT}})$. For small $K$, ${\ensuremath{\epsilon}}_{3}=(\frac{{e}^{2}}{{\ensuremath{\kappa}}_{0}}){(\frac{4\ensuremath{\pi}{n}_{D}}{3})}^{\frac{1}{3}}(1\ensuremath{-}1.35{K}^{\frac{1}{3}})$, where ${\ensuremath{\kappa}}_{0}$ is the dielectric constant. At higher $K$, ${\ensuremath{\epsilon}}_{3}$ and $\ensuremath{\rho}$ attain a minimum near $K=0.5$. The dependence on ${n}_{D}$ is extracted; the agreement of the latter and of ${\ensuremath{\epsilon}}_{3}$ with experiment is satisfactory. The magnitude of $\ensuremath{\rho}$ is in fair agreement with experiment. The influence of excited donor states on $\ensuremath{\rho}$ is discussed.

Impurity Conduction at Low Concentrations.

The paper reports the fabrication and characterization of ZnO-based interdigitated metal–semiconductor–metal (MSM) and metal–insulator–semiconductor–insulator–metal (MISIM) ultraviolet photodetectors. The ZnO thin film was grown on a p-type Si 1 0 0 substrate by the sol–gel technique. With applied voltage in the range from −3 to 3 V we estimated the contrast ratio, responsivity, detectivity and quantum efficiency of the photodetectors for an incident optical power of 0.1 mW at 365 nm ultraviolet wavelength. The I–V characteristics were studied and the parameters such as ideality factor, leakage current and barrier height were extracted from the measured data. For Au/Cr/SiO2/ZnO/SiO2/Al (MISIM) structure the product (mχ) of the tunnelling effective electron mass (m) and the mean tunnelling barrier height (χ) was also extracted.

https://iopscience.iop.org/article/10.1088/0022-3727/43/41/415103/pdf

ZnO-based interdigitated MSM and MISIM ultraviolet photodetectors

High-performance a-IGZO TFT with ZrO2 gate dielectric fabricated at room temperature

Polyanthranilic acid (PANA), a self-doped processible conducting polymer, was synthesized and used for the first time for fabrication of contacts with configurations of (Al, Ti, Sn metal)/PANA/indium tin oxide-coated glass. The current-voltage (I-V) characteristics were measured by using microprobe arrangements, and the diode performance parameters were extracted. The I-V characteristics of the aforementioned configuration exhibited a rectifying contact for the case of Al and Ti metal contacts but an ohmic contact for the case of Sn metal contact. The electroactivity of PANA was carried out in acidic solution, and film morphology was studied by using atomic force microscope. UV-Vis spectroscopic technique was used to obtain the optical bandgap of the polymer.

Electronic Properties and Junction Behavior of Polyanthranilic Acid/Metal Contacts

Effect of gate dielectric on the performance of ZnO based thin film transistor

A power amplifier is implemented using a SiC Graphene Field-Effect Transistor. The amplifier gain is enhanced using an input matching LC circuit, which is connected to the GFET through standard RF probes. Experimental measurements and ADS-simulation based on developed models are used for the evaluation of the performances of the SiC GFET-based amplifier. It has been shown that a power gain of 4.8 dB can be achieved at 2.4 GHz using the GFET and the matching circuit assembly. Technology parameters are studied towards the improvement of the amplifier's figures of merit.

Towards amplifier design with a SiC graphene field-effect transistor

In this paper we explain the results of our experimental investigation on interface properties and junction behavior of Pd contact on ZnO thin film based Schottky diode. We used a conventional vacuum evaporation deposition unit for sequential deposition of ZnO film and metallic layer. For the first time a high quality Pd/ZnO Schottky diode is fabricated successfully in our laboratory by vacuum evaporation method. The I-V and C-V characteristics of the devices were studied by using microprobe arrangement. The parameter such as ideality factor, leakage current, resistance-area-product, carrier concentration and barrier height were extracted from the measured data. The surface morphological and the structural properties of thin film were studied by atomic force microscope. The optical band gap of thin film was determined using UV-visible spectrophotometer. The device fabricated by a simple technique exhibited excellent stability for use as an electronic or optoelectronic component. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Interface properties and junction behavior of Pd contact on ZnO thin film grown by vacuum deposition technique

Effects of the back-end-of-line layers up to metal-1 on the self-heating and thermal coupling in a multi-finger silicon germanium heterojunction bipolar transistor (SiGe MFT) are investigated. It is observed that the rise in junction temperature is overestimated if the BEOL effects are not considered. A new method for estimating the thermal coupling coefficients is proposed emulating the real operating condition. The proposed methodology demonstrates that the thermal coupling is increased in real operating condition and the estimated coupling coefficients are almost independent of the dissipated power. Further an empirical closed-form formulation is proposed for estimating the coupling coefficients analytically and for subsequently using in compact model simulation. The formulation is found to predict the coefficients quite accurately. Compact model simulations using the analytically obtained coupling coefficients show excellent model agreement with the static and dynamic 3D TCAD simulation data for junction temperature. Finally the model is validated against the measured data corresponding to an SiGe MFT fabricated using B55 technology from ST microelectronics.

A.D.D. Dwivedi

Papers

Electronic Properties and Junction Behavior of Polyanthranilic Acid/Metal Contacts

Effect of gate dielectric on the performance of ZnO based thin film transistor

Towards amplifier design with a SiC graphene field-effect transistor

Interface properties and junction behavior of Pd contact on ZnO thin film grown by vacuum deposition technique

Effects of BEOL on self-heating and thermal coupling in SiGe multi-finger HBTs under real operating condition