T
Thomas Zimmer
Researcher at University of Bordeaux
Publications - 284
Citations - 2823
Thomas Zimmer is an academic researcher from University of Bordeaux. The author has contributed to research in topics: Bipolar junction transistor & Transistor. The author has an hindex of 22, co-authored 275 publications receiving 2458 citations. Previous affiliations of Thomas Zimmer include Centre national de la recherche scientifique.
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Journal ArticleDOI
CNTFET Modeling and Reconfigurable Logic-Circuit Design
Ian O'Connor,Liu Junchen,Frédéric Gaffiot,Fabien Prégaldiny,Christophe Lallement,Cristell Maneux,J. Goguet,Sebastien Fregonese,Thomas Zimmer,Lorena Anghel,Trong-Trinh Dang,Regis Leveugle +11 more
TL;DR: Examination of design technology required to explore advanced logic-circuit design using carbon nanotube field-effect transistor (CNTFET) devices finds the exploitation of properties specific to CNTFETs to build functions inaccessible to MOSFETs.
Journal ArticleDOI
Scalable Electrical Compact Modeling for Graphene FET Transistors
TL;DR: In this paper, a scalable electrical compact model for the Graphene FET devices is proposed, starting from Thiele's quasianalytical model, the equations are modified to be fully compatible with SPICE-like circuit simulation.
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Computationally Efficient Physics-Based Compact CNTFET Model for Circuit Design
Sebastien Fregonese,H. Cazin d'Honincthun,J. Goguet,Cristell Maneux,Thomas Zimmer,Jean-Philippe Bourgoin,Philippe Dollfus,S. Galdin-Retailleau +7 more
TL;DR: In this paper, the authors present a computationally efficient physics-based compact model designed for the conventional CNTFET featuring a MOSFET-like operation, which is based on the implementation of a new analytical model of the channel charge.
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Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design
Sourabh Khandelwal,Chandan Yadav,Shantanu Agnihotri,Yogesh Singh Chauhan,Arnaud Curutchet,Thomas Zimmer,Jean-Claude De Jaeger,Nicolas Defrance,Tor A. Fjeldly +8 more
TL;DR: In this paper, an accurate and robust surfacepotential-based compact model for simulation of circuits designed with GaN-based high-electron mobility transistors (GaN HEMTs) is presented.
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Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications
Pascal Chevalier,Michael Schroter,Colombo R. Bolognesi,Vincenzo d'Alessandro,Maria Alexandrova,Josef Bock,Ralf Flickiger,Sebastien Fregonese,Bernd Heinemann,Christoph Jungemann,Rickard Lovblom,Cristell Maneux,Olivier Ostinelli,Andreas Pawlak,Niccolò Rinaldi,Holger Rucker,G. Wedel,Thomas Zimmer +17 more
TL;DR: This paper presents Si/SiGe:C and InP/GaAsSb HBTs which feature specific assets to address submillimeter-wave and THz applications and discusses the specific topics of thermal and substrate effects, reliability, and HF measurements.