Preparation of Cr-doped Y3Al5O12 phosphors by heterogeneous precipitation methods and their luminescent properties

A semiconductor structure (20) includes a silicon layer (16) formed on an oxide layer (14) Gettering sinks (31, 32) are formed in the silicon layer (16) Lateral gettering is performed to effectively remove impurities from a first section (26) of the semiconductor layer (16) An insulated gate semiconductor device (40) is then formed in semiconductor layer (16), wherein a channel region (55) of the device (40) is formed in the first section (26) of the semiconductor layer (16) A gate dielectric layer (42) of the device (40) is formed over a portion of the first section (26) after the lateral gettering process, thereby enhancing the integrity of the gate dielectric layer (42)

Method for fabricating a semiconductor device using lateral gettering

A command line interface for a data processing system includes an output facility that displays outputs to an operator, a parser that validates inputs entered a command line, a command processor that processes commands validated by the parser. The command line interface preferably supports a prompt mode in which the output facility displays an editable prompt that may be modified by the user to construct a command. In addition, the parser preferably defines separate validation and execution point inputs including at least one validation-only point input, so that inputs are permitted to span multiple input lines and so that atomic sets of commands can be constructed by entering multiple commands on a single input line. The command line interface is also equipped with an in-line help facility that, in response to the parser detecting a help request in a partial command entered at the command line, automatically presents possible input options that can be entered at the command line to complete the partial command.

Command line interface for a data processing system

Capacitance‐voltage measurements were used to analyze buried oxide layers formed by the implantation of oxygen into silicon substrates. The analysis is based on the extension of conventional metal/oxide/semiconductor capacitor theory to the two buried oxide interfaces of the epilayer/oxide/substrate structure. The processing parameters include oxygen doses of 1.8 or 2.0×1018 cm−2, implant temperature of 500 °C, and anneal temperature of 1250 °C for 2 or 16 h. The results are fixed oxide charge densities of 2–3×1011 and 1–2×1010 cm−2 for the epi/oxide and substrate/oxide interfaces, respectively; interface trap densities are 0.5 to 2×1011 cm−2 eV−1 for the epi/oxide interface, and not measurable for the substrate/oxide interface. The epilayer/oxide interface was found to be more sensitive to processing variations than the substrate/oxide interface.

Determination of the fixed oxide charge and interface trap densities for buried oxide layers formed by oxygen implantation

Thermodynamic measurement of Dy + Fe binary system by double Knudsen cell mass spectrometry

Copper is shown to be inadvertently introduced as an impurity during the formation of silicon‐on‐insulator structures by high fluence oxygen implantation. Postimplantation annealing causes the copper to diffuse from the silicon surface through the oxide and be preferentially gettered to dislocations that originate at the oxide‐silicon substrate interface. The concentration of copper in the silicon surface layer is reduced by a factor of two, and no copper remains in the buried oxide layer. Sufficient gettering occurs for the fabrication of fully functional n‐channel metal‐oxide‐semiconductor field‐effect‐transistors, with, however, a low yield. Also, the effective carrier mobility in the inversion layer of the transistors is severely degraded, and this is attributed primarily to copper retained in that layer.

A. E. Morgan

Papers

Gettering of copper in silicon-on-insulator structures formed by oxygen ion implantation