A
A. G. Eremeev
Researcher at Russian Academy of Sciences
Publications - 88
Citations - 1124
A. G. Eremeev is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Microwave & Gyrotron. The author has an hindex of 17, co-authored 80 publications receiving 1000 citations.
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Journal ArticleDOI
Microwave heating of conductive powder materials
TL;DR: In this article, a consistent formulation describing the absorption of microwaves in electrically conductive materials under different microwave heating conditions is developed, and a special case when conductive powder particles are surrounded by insulating oxide layers is investigated in detail using the effective medium approximation.
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24-84-GHz gyrotron systems for technological microwave applications
A. A. Bogdashov,Yu. V. Bykov,Gregory G. Denisov,A. G. Eremeev,M. Yu. Glyavin,G. I. Kalynova,V. V. Kholoptsev,A. G. Luchinin,I. V. Plotnikov,V. E. Semenov,N. A. Zharova +10 more
TL;DR: In this article, a line of gyrotrons ranging in frequency from 24 to 84 GHz with the output power from 3 to 35 kW continuous wave, and a series of gyrotron-based systems have been developed by the Institute of Applied Physics, Nizhny Novgorod, Russia, jointly with GYCOM.
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Comparative Study of Microwave Sintering of Zinc Oxide at 2.45, 30, and 83 GHz
Amikam Birnboim,D. Gershon,Jeffery Calame,A. Birman,Yuval Carmel,John C. Rodgers,Baruch Levush,Yurii Bykov,A. G. Eremeev,V. V. Holoptsev,V. E. Semenov,D. Dadon,Peter L. Martin,M. Rosen,Ron Hutcheon +14 more
TL;DR: In this article, identical samples of ZnO powder compacts were microwave heated at three distinct widely separated frequencies of 2.45, 30, and 83 GHz and the core and surface temperatures were simultaneously monitored.
Journal ArticleDOI
On the Mechanism of Microwave Flash Sintering of Ceramics.
Yury V. Bykov,S. V. Egorov,A. G. Eremeev,V. V. Kholoptsev,I. V. Plotnikov,Kirill I. Rybakov,A. A. Sorokin +6 more
TL;DR: The results of a study of ultra-rapid (flash) sintering of oxide ceramic materials under microwave heating with high absorbed power per unit volume of material are presented and an analysis of the experimental data (microwave power; heating and cooling rates) along with microstructure characterization provided an insight into the mechanism.
Journal ArticleDOI
Diffusion Processes in Semiconductor Structures During Microwave Annealing
Yu. V. Bykov,A. G. Eremeev,N. A. Zharova,I. V. Plotnikov,Kirill I. Rybakov,M. N. Drozdov,Yu. N. Drozdov,V. D. Skupov +7 more
TL;DR: In this paper, the influence of microwave radiation on the diffusion process in two different semiconductor materials, namely, InGaAs heterostructures with quantum wells and boron-ion implanted silicon, was investigated in a 30 GHz gyrotron device for microwave processing of materials.