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A.K. Kulkarni

Researcher at Michigan Technological University

Publications -  15
Citations -  531

A.K. Kulkarni is an academic researcher from Michigan Technological University. The author has contributed to research in topics: Thin film & Ohmic contact. The author has an hindex of 10, co-authored 15 publications receiving 505 citations.

Papers
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Dependence of the sheet resistance of indium-tin-oxide thin films on grain size and grain orientation determined from X-ray diffraction techniques

TL;DR: In this paper, an X-ray diffractometer (XRD) and a transmission electron microscope (TEM) were used to determine the microstructure of ITO thin films.
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Electrical, optical and structural characteristics of indium-tin-oxide thin films deposited on glass and polymer substrates

TL;DR: In this article, the sheet resistance, optical transmittance and microstructure of tin-doped indium oxide (ITO) thin films (50-100-nm thick) rf sputter deposited on polymer substrates are investigated using a four-point probe, spectrophotometer, X-ray diffractometer and a transmission electron microscope (TEM).
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Electrical and structural characteristics of chromium thin films deposited on glass and alumina substrates

TL;DR: In this paper, the electrical resistivities of electron beam deposited and sputter deposited chromium thin films (25-500 nm) on glass and alumina substrates are correlated with the structural characteristics of the films determined by X-ray diffraction, scanning electron microscope and Auger electron spectrometer.
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Electrical, optical, and structural properties of indium-tin-oxide thin films deposited on polyethylene terephthalate substrates by rf sputtering

TL;DR: In this article, the sheet resistance, optical transmittance, and microstructure of as-deposited ITO thin films on unheated polyethylene terephthalate substrates were studied using rf sputter deposition.
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Electrical, optical and chemical properties of indium-tin oxidized films grown by sequential electron beam deposition of indium and tin

TL;DR: In this article, a layer-by-layer deposition of indium and tin by electron beam deposition and subsequent annealing in oxygen atmosphere to form indium tin oxide was attempted.