Showing papers by "A.K. Pal published in 1983"
TL;DR: In this paper, the electrical resistivity, temperature coefficient of resistivity and Hall constant and thermoelectric power of antimony films were measured in situ and it was shown that holes were the majority carriers in these films.
12 citations
TL;DR: In this paper, the thermoelectric power of aluminum film was measured in the thickness range of 300-1600 A. From the size effect of electron diffusion term, the energy dependence of the mean free path of conduction electrons (U) and the Fermi surface area (V) were calculated to be U=0.957 and V=1.322.
Abstract: The thermoelectric power (TEP) of aluminum film was measured in the thickness range of 300–1600 A. From the size effect of electron diffusion term, the energy dependence of the mean free path of conduction electrons (U) and the Fermi surface area (V) were calculated to be U=0.957 and V=1.322. The phonon‐drag part of TEP also exhibited a size effect from which the mean free path of the dominant phonon mode was estimated to be 400 A. The effect of grain boundary scattering on thermoelectric power was also studied.
9 citations
TL;DR: The thermoelectric power (TEP) of tin films was measured in the thickness range 400-2200 A between 30 and 100°C as mentioned in this paper, and it was observed that the TEP for films deposited onto glass substrates can be expressed as S = aT + n and the mean free path theory can be applied to analyse the data.
4 citations