We report on superconducting nanowire single photon detectors (SNSPDs) based on 30 nm wide nanowires with detection efficiency η ∼ 2.6–5.5% in the wavelength range λ = 0.5–5 μm. We compared the sensitivity of 30 nm wide SNSPDs with the sensitivity of SNSPDs based on wider (85 and 50 nm wide) nanowires for λ = 0.5–5 μm. The detection efficiency of the detectors based on the wider nanowires became negligible at shorter wavelengths than the 30 nm wide SNSPDs. Our 30 nm wide SNSPDs showed 2 orders of magnitude higher detection efficiency (η ∼ 2%) up to longer wavelength (λ = 5 μm) than previously reported. On the basis of our simulations, we expect that by changing the optical coupling scheme and by integrating the detectors in an optical cavity, the detection efficiency of our detectors could be increased by a factor of ∼6.

Efficient single photon detection from 500 nm to 5 μm wavelength

A handheld electronic device may be provided that contains a conductive housing and other conductive elements. The conductive elements may form an antenna ground plane. One or more antennas for the handheld electronic device may be formed from the ground plane and one or more associated antenna resonating elements. Transceiver circuitry may be connected to the resonating elements by transmission lines such as coaxial cables. Ferrules may be crimped to the coaxial cables. A bracket with extending members may be crimped over the ferrules to ground the coaxial cables to the housing and other conductive elements in the ground plane. The ground plane may contain an antenna slot. A dock connector and flex circuit may overlap the slot in a way that does not affect the resonant frequency of the slot. Electrical components may be isolated from the antenna using isolation elements such as inductors and resistors.

Handheld electronic device with cable grounding

A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and/or magnetic fields are used to control the characteristics of spin-polarized current flow. The nonmagnetic semiconductor device exploits the properties of bulk inversion asymmetry (BIA) in (110)-oriented quantum wells. The nonmagnetic semiconductor device may also be used as a nonmagnetic semiconductor spin valve and a magnetic field sensor. The spin transistor and spin valve may be applied to low-power and/or high-density and/or high-speed logic technologies. The magnetic field sensor may be applied to high-speed hard disk read heads. The spin RTD of the present invention would be useful for a plurality of semiconductor spintronic devices for spin injection and/or spin detection.

http://frg.physics.uiowa.edu/publications/2003_082.pdf

Non-magnetic semiconductor spin transistor

Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization

Publisher Summary This chapter provides an overview of type-II superlattice infrared detectors. The type-II InAs/GaSb superlattices have several fundamental properties that make them suitable for infrared detection: (1) their band gaps can be made arbitrarily small by design, (2) they are more immune to band-to-band tunneling compared with bulk material, (3) the judicious use of strain in type-II InAs/GaInSb strained layer superlattice (SLS) can enhance its absorption strength over that of the type-II InAs/GaSb superlattice to a level comparable with HgVdTe (MCT), and (4) type-II InAs/Ga(In)Sb superlattices also reduce Auger recombination. In addition, the dark current characteristics of type-II superlattice-based single element long-wavelength infrared (LWIR) detectors are currently approaching state-of-the-art MCT detector. Noise measurements highlight the need for surface leakage suppression, which can be tackled by improved etching, passivation, and device design. The chapter also describes the principles behind advanced superlattice infrared detectors based on heterostructure designs. It also explores some aspects of device fabrication and characterization.

Type-II Superlattice Infrared Detectors

We report on optically pumped semiconductor lasers emitting near 3.8 μm that exhibit high power and low output divergence. The lasers incorporate multiple InAs/InGaSb/InAs type-II wells imbedded in an InGaAsSb waveguide that is designed to absorb the pump emission. When operated at 85 K, 0.25 mm×2.5 mm broad area devices produce >5 W of peak power under long pulse conditions. Moreover, these extremely bright devices exhibit a fast axis divergence of only ∼15° full width at half maximum (FWHM), coupled with a slow axis divergence of ∼6° FWHM. The first is due to the reduced optical confinement in the transverse direction, while the latter is attributed to the suppression of filament formation, which is another beneficial consequence of the low optical confinement.

High power and high brightness from an optically pumped InAs/InGaSb type-II midinfrared laser with low confinement

We describe the photoluminescence spectroscopy (PL) and Fourier transform infrared absorbance spectroscopy characterization of a large set of InAs/GaSb type-II strained layer superlattice (SLS) samples. The samples are designed to probe the effect of GaSb layer thickness on the optical properties of the SLS, while the InAs-layer thickness is held fixed. As the GaSb layer thickness is increased, we observe a spectral blue shift of the PL peaks that is accompanied by an increase in intensity, narrower linewidths, and a large reduction in the temperature sensitivity of the luminescence. These effects occur despite a significant reduction in the electron-hole wave function overlap as the GaSb layer thickness is increased. In addition, we compare the results of empirical pseudopotential model (EPM) calculations to the observed blueshift of the primary band gap. The EPM calculations are found to be in very good agreement with the observed data.

Spectral blueshift and improved luminescent properties with increasing GaSb layer thickness in InAs–GaSb type-II superlattices

We describe the molecular-beam epitaxy growth, as well as both the structural and optical characterization of a set of InAs/GaSb type-II strained-layer superlattice samples, in which the GaSb layer thickness is systematically increased. Absorbance spectroscopy measurements show well-defined features associated with transitions from the various valence subbands to the lowest conduction subband, and also a significant blueshift of the band edge when the GaSb layers thickness is increased. Empirical pseudopotential method calculations are shown to successfully predict the blueshift and help identify the higher-energy transitions.

Absorbance spectroscopy and identification of valence subband transitions in type-II InAs/GaSb superlattices

As-soak control of the InAs-on-GaSb interface

We provide an update on the further development of optically pumped semiconductor lasers based on the InAs∕InGaSb∕InAs type-II quantum wells. We show increased power generation, as well as the inherent flexibility to produce devices that can emit at any wavelength in the ∼2.4μm to ∼9.3μm range with consistently high photon-to-photon conversion rates.

A. P. Ongstad

Papers

High power and high brightness from an optically pumped InAs/InGaSb type-II midinfrared laser with low confinement

Spectral blueshift and improved luminescent properties with increasing GaSb layer thickness in InAs–GaSb type-II superlattices

Absorbance spectroscopy and identification of valence subband transitions in type-II InAs/GaSb superlattices

As-soak control of the InAs-on-GaSb interface

High performance optically pumped antimonide lasers operating in the 2.4–9.3μm wavelength range