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A. Paul Alivisatos

Researcher at Lawrence Berkeley National Laboratory

Publications -  488
Citations -  109587

A. Paul Alivisatos is an academic researcher from Lawrence Berkeley National Laboratory. The author has contributed to research in topics: Nanocrystal & Quantum dot. The author has an hindex of 146, co-authored 470 publications receiving 101741 citations. Previous affiliations of A. Paul Alivisatos include Ludwig Maximilian University of Munich & University of Hamburg.

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Process for making surfactant capped nanocrystals

TL;DR: In this article, a process for making surfactant capped nanocrystals of transition metal oxides is described, which consists of reacting a metal cupferron complex of the formula M Cup, wherein M is a transition metal, and Cup is a cup-ferron, with a coordinating surfactants, the reaction being conducted at a temperature ranging from about 250 to about 300 C, for a period of time sufficient to complete the reaction.
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Anisotropic Formation and Distribution of Stacking Faults in II–VI Semiconductor Nanorods

TL;DR: Wurtzite nanorods of cadmium selenide tend to form stacking faults of zinc blende along the c-axis, and the two ends of the nanorod may be identified by this anisotropic distribution of faults.
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Inorganic micelles as efficient and recyclable micellar catalysts.

TL;DR: This work suggests that inorganic micelles may be suitable for selective organic syntheses as well as industrial applications and demonstrates the value of translating nanostructure design from organic to inorganic.
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Symmetry Breaking in Tetrahedral Chiral Plasmonic Nanoparticle Assemblies

TL;DR: In this paper, the effects of symmetry breaking on the chiroptical response of an assembly of plasmonic nanoparticles using simulation were explored, and it was shown that the intensity, spectral position, and handedness of the CD response are tunable with small structural changes.
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Controlled chemical doping of semiconductor nanocrystals using redox buffers.

TL;DR: This application of redox buffers for controlled doping provides a new method for the precise control of the majority carrier concentration in porous semiconductor thin films.