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A. Paul Alivisatos

Researcher at Lawrence Berkeley National Laboratory

Publications -  488
Citations -  109587

A. Paul Alivisatos is an academic researcher from Lawrence Berkeley National Laboratory. The author has contributed to research in topics: Nanocrystal & Quantum dot. The author has an hindex of 146, co-authored 470 publications receiving 101741 citations. Previous affiliations of A. Paul Alivisatos include Ludwig Maximilian University of Munich & University of Hamburg.

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Elucidating the Weakly Reversible Cs-Pb-Br Perovskite Nanocrystal Reaction Network with High-Throughput Maps and Transformations.

TL;DR: This work systematically explore the portion of Cs-Pb-Br synthesis space in which many optically distinguishable species are formed using high-throughput robotic synthesis to understand their formation reactions, and demonstrates a dynamic equilibrium between complexes, monolayers and nanocrystals of lead bromide.
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Anomalous nanoparticle surface diffusion in LCTEM is revealed by deep learning-assisted analysis.

TL;DR: The anomalous diffusion of nanoparticles in LCTEM is characterized using a convolutional deep neural-network model and canonical statistical tests and the results demonstrate that the nanoparticle motion is governed by fractional Brownian motion at low dose rates, resembling diffusion in a viscoelastic medium, and continuous-time random walk at high dose rates resembling diffusion on an energy landscape with pinning sites.
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Dynamic Charge Carrier Trapping in Quantum Dot Field Effect Transistors

TL;DR: The dynamics of charge injection and transport in PbS quantum dot (QD) monolayers in a field effect transistor (FET) is studied to propose that the underlying mechanism is some reversible electrochemical process involving dissociation and diffusion of water and/or oxygen related species.
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Ion Exchange Synthesis of III—V Nanocrystals.

TL;DR: Cation exchange of Cd3As2 or cd3P2 nanocrystals dissolved in tri-n-octylphosphine with group 13 ions (InCl3, GaCl3) yields monodisperse, crystalline III-V nanocrystal, including GaAs, InAs, GaP, and InP (270-300 °C, 15 min) as mentioned in this paper.
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Strain and deformation in ultra-hard nanocomposites nc-TiN/a-BN under hydrostatic pressure

TL;DR: In this article, a high pressure diffraction study was carried out on nanocrystalline TiN/amorphous BN nanocomposite materials prepared by plasma chemical vapor deposition.