http://nathan.instras.com/ResearchProposalDB/doc-109.pdf

A review on polymer nanofibers by electrospinning and their applications in nanocomposites

https://cmapspublic3.ihmc.us/rid=1N3976C22-12M3P49-9V/Holladay%20et%20al.%20-%202009%20-%20An%20overview%20of%20hydrogen%20production%20technologies.pdf

An overview of hydrogen production technologies

Effective thermal conductivity of mixtures of e uids and nanometer-size particles is measured by a steady-state parallel-plate method. The tested e uids contain two types of nanoparticles, Al 2O3 and CuO, dispersed in water, vacuum pump e uid, engine oil, and ethylene glycol. Experimental results show that the thermal conductivities of nanoparticle ‐e uid mixtures are higher than those of the base e uids. Using theoretical models of effective thermal conductivity of a mixture, we have demonstrated that the predicted thermal conductivities of nanoparticle ‐e uid mixtures are much lower than our measured data, indicating the dee ciency in the existing models when used for nanoparticle ‐e uid mixtures. Possible mechanisms contributing to enhancement of the thermal conductivity of the mixtures are discussed. A more comprehensive theory is needed to fully explain the behavior of nanoparticle ‐e uid mixtures. Nomenclature cp = specie c heat k = thermal conductivity L = thickness Pe = Peclet number P q = input power to heater 1 r = radius of particle S = cross-sectional area T = temperature U = velocity of particles relative to that of base e uids ® = ratio of thermal conductivity of particle to that of base liquid ¯ = .® i 1/=.® i 2/ ° = shear rate of e ow Ω = density A = volume fraction of particles in e uids Subscripts

/pdf/thermal-conductivity-of-nanoparticle-fluid-mixture-54tj4jnmls.pdf

Thermal Conductivity of Nanoparticle -Fluid Mixture

Recent advances in friction-stir welding : Process, weldment structure and properties

Controlled self-organization of nanoparticles can lead to new materials. The colloidal crystallization of non-spherical nanocrystals is a reaction channel in many crystallization reactions. With additives, self-organization can be stopped at an intermediary step-a mesocrystal-in which the primary units can still be identified. Mesocrystals were observed for various systems as kinetically metastable species or as intermediates in a crystallization reaction leading to single crystals with typical defects and inclusions. The control forces and mechanism of mesocrystal formation are largely unknown, but several mesocrystal properties are known. Mesocrystals are exiting examples of nonclassical crystallization, which does not proceed through ion-by-ion attachment, but by a modular nanobuilding-block route. This path makes crystallization more independent of ion products or molecular solubility, it occurs without pH or osmotic pressure changes, and opens new strategies for crystal morphogenesis.

/pdf/mesocrystals-inorganic-superstructures-made-by-highly-4ywmg6vzs9.pdf

Mesocrystals: Inorganic superstructures made by highly parallel crystallization and controlled alignment

Materials Research Society Symposium - Proceedings

The reaction mechanisms in the Si|Ta|Cu and Si|TaC|Cu metallization systems are discussed based on the experimental results and the assessed ternary Si-Ta-Cu, Si-Ta-C and Ta-C-Cu phase diagrams. The ternary Si-Ta-N and Ta-N-Cu phase diagrams were also assessed in order to compare the thermodynamic properties of the TaC diffusion barriers to more widely investigated TaNx diffusion barriers. With the help of the sheet resistance measurements, RBS, XRD, SEM, and TEM the Ta barrier layer was observed to fail above 650 °C due to the formation of TaSi2. This was accompanied by the diffusion of Cu through the silicide layer and the resulting formation of Cu3Si precipitates. The stability of the TaC layers was better and the failure was observed above 750 °C due to the formation of Cu3Si and TaSi2. However, interdiffusion of Cu and Si was observed already at lower temperatures due to the presence of pinholes in the TaC layer. This emphasises the importance of the fabrication method and the quality of the TaC layers.

A. Seppälä

Papers

Materials Research Society Symposium - Proceedings

Reliability of tantalum based diffusion barriers between Cu and Si