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A. Smirnov
Researcher at Belarusian State University of Informatics and Radioelectronics
Publications - 38
Citations - 336
A. Smirnov is an academic researcher from Belarusian State University of Informatics and Radioelectronics. The author has contributed to research in topics: Transmittance & Anodizing. The author has an hindex of 9, co-authored 35 publications receiving 282 citations. Previous affiliations of A. Smirnov include Cherepovets State University.
Papers
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Critical review on sputter-deposited Cu2ZnSnS4 (CZTS) based thin film photovoltaic technology focusing on device architecture and absorber quality on the solar cells performance
Siarhei Zhuk,Siarhei Zhuk,Ajay Kushwaha,Ajay Kushwaha,Terence Kin Shun Wong,Saeid Masudy-Panah,A. Smirnov,Goutam Kumar Dalapati +7 more
TL;DR: In this paper, the advantages and challenges associated with sputter-deposited CZTS solar cells, since sputtering is an industry compatible and relatively low-cost vacuum deposition technique, are discussed.
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Nanomesh Aluminum Films for LC Alignment. Theoretical and Experimental Modeling
A. K. Dadivanyan,Victor V. Belyaev,D. N. Chausov,A. A. Stepanov,A. Smirnov,A. G. Tsybin,Mikhail A. Osipov +6 more
TL;DR: In this article, a model of the LC alignment in a porous system is proposed and the LC orientation type is determined by the free anchoring energy and the micropore diameter.
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Effect of silver nanowire length in a broad range on optical and electrical properties as a transparent conductive film
Mikita Marus,Aliaksandr Hubarevich,Reuben Jeremy Weixiong Lim,Haoliang Huang,A. Smirnov,Hong Wang,Weijun Fan,Xiao Wei Sun +7 more
TL;DR: In this paper, the optical and electrical properties of silver nanowire transparent conductive films with a broad range of length of nanowires were studied, and a simulation model demonstrated similar behavior with experimental results for 30 and 90 μm nanowsires, and thus it was used to expand the range of nanowsire lengths from 10 to 200 μm.
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Porous Silicon Avalanche LEDs and their Applications in Optoelectronics and Information Displays
TL;DR: The use of silicon based light emitting diodes may completely solve the problem of low compatibility of optoelectronics elements and silicon chip at present time the most suitable kinds of Si-LEDs are monocrystal and porous silicon avalanche LEDs They have advantages such as long operation lifetime (> 10000 hours), continuous spectrum, which allows to filter RGB colors, operation voltages (< 12 V), extremely sharp voltage-current characteristic, nanosecond response time, and high high operation current densities (up to 8000 A/cm in pulse mode) Rather low energy efficiency (< 1%) is not
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Optoelectronic performance optimization for transparent conductive layers based on randomly arranged silver nanorods.
TL;DR: The results demonstrate that randomly arranged Ag layers are promising candidates for flexible TCLs and the balance between transmittance and sheet resistance can be easily set by varying the combinations of NR radius and NR number.