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A. Yu. Kuznetsov
Researcher at University of Oslo
Publications - 110
Citations - 2779
A. Yu. Kuznetsov is an academic researcher from University of Oslo. The author has contributed to research in topics: Ion implantation & Vacancy defect. The author has an hindex of 24, co-authored 106 publications receiving 2387 citations.
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Journal ArticleDOI
Identification of oxygen and zinc vacancy optical signals in ZnO
T. Moe Børseth,Birte Svensson,A. Yu. Kuznetsov,Peter Klason,Qing Xiang Zhao,Magnus Willander +5 more
TL;DR: In this paper, the authors used photoluminescence spectroscopy to study single crystalline ZnO samples systematically annealed in inert, Zn-rich and O-rich atmospheres.
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Iron and intrinsic deep level states in Ga2O3
M. E. Ingebrigtsen,Joel B. Varley,A. Yu. Kuznetsov,Bengt Gunnar Svensson,Giovanni Alfieri,Andrei Mihaila,U. Badstübner,Lasse Vines +7 more
TL;DR: Using a combination of deep level transient spectroscopy, secondary ion mass spectrometry, proton irradiation, and hybrid functional calculations, this article identified two similar deep levels that are associated with Fe impurities and intrinsic defects in bulk crystals and molecular beam epitaxy and hydride vapor phase epitaxi-grown epilayers of β-Ga2O3.
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Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation
K. E. Knutsen,Augustinas Galeckas,A. Zubiaga,Filip Tuomisto,G. C. Farlow,B. G. Svensson,A. Yu. Kuznetsov +6 more
TL;DR: In this article, a strong indication that oxygen interstitials act as dominating acceptor is derived from the analysis of charge carrier losses induced by electron irradiation with variable energy below and above the threshold for Zn-atom displacement.
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Vacancy defect and defect cluster energetics in ion-implanted ZnO
TL;DR: In this article, the authors used depth-resolved cathodoluminescence, positron annihilation, and surface photovoltage spectroscopies to determine the energy levels of Zn vacancies and vacancy clusters in bulk ZnO crystals.
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Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3
M. E. Ingebrigtsen,A. Yu. Kuznetsov,Bengt Gunnar Svensson,Giovanni Alfieri,Andrei Mihaila,U. Badstübner,Aurélien Perron,Lasse Vines,Joel B. Varley +8 more
TL;DR: In this paper, single crystalline bulk and epitaxially grown gallium oxide (β-Ga2O3) was irradiated by 0.6 and 1.9 MeV protons to doses ranging from 5 × 109 to 6 × 1014 cm−2 in order to study the impact on charge carrier concentration and electrically active defects.