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Aaesha Alnuaimi

Researcher at Masdar Institute of Science and Technology

Publications -  34
Citations -  418

Aaesha Alnuaimi is an academic researcher from Masdar Institute of Science and Technology. The author has contributed to research in topics: Thin film & Silicon. The author has an hindex of 10, co-authored 33 publications receiving 311 citations. Previous affiliations of Aaesha Alnuaimi include Khalifa University.

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Effect of gold nanoparticles size on light scattering for thin film amorphous-silicon solar cells

TL;DR: In this article, the effect of gold nanoparticles on the performance of a-Si:H solar cells is investigated experimentally, and the results show an increase in the shortcircuit current density (J sc ) and efficiency with increasing nanoparticle size.
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High performance graphene-silicon Schottky junction solar cells with HfO2 interfacial layer grown by atomic layer deposition

TL;DR: In this paper, hafnium oxide (HfO2) grown by atomic layer deposition (ALD) has been investigated as an interfacial layer for Gr/Si Schottky junction solar cells.
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Effect of mobility and band structure of hole transport layer in planar heterojunction perovskite solar cells using 2D TCAD simulation

TL;DR: In this article, the authors investigate perovskite planar heterojunction solar cells using 2D physics-based TCAD simulation and show that in order to achieve high efficiency, the mobility of the hole transport layer should exceed 10-4cm2/V s.
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Interface engineering of graphene–silicon Schottky junction solar cells with an Al2O3 interfacial layer grown by atomic layer deposition

TL;DR: In this paper, an Al2O3 interfacial layer was used to enhance the performance and stability of Gr/Si SBSC by increasing the Schottky barrier height from 0.843 V to 0.912 V.
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Reduction of interface traps at the amorphous-silicon/crystalline-silicon interface by hydrogen and nitrogen annealing

TL;DR: In this article, annealing in nitrogen (95%) and hydrogen (5%) for 10, 20 and 25 min at 400°C was shown to reduce the trap density at the a-Si/c-Si interface.