In this paper, we review different memristive threshold logic (MTL) circuits that are inspired from the synaptic action of the flow of neurotransmitters in the biological brain. The brainlike generalization ability and the area minimization of these threshold logic circuits aim toward crossing Moore’s law boundaries at device, circuits, and systems levels. Fast switching memory, signal processing, control systems, programmable logic, image processing, reconfigurable computing, and pattern recognition are identified as some of the potential applications of MTL systems. The physical realization of nanoscale devices with memristive behavior from materials, such as TiO2, ferroelectrics, silicon, and polymers, has accelerated research effort in these application areas, inspiring the scientific community to pursue the design of high-speed, low-cost, low-power, and high-density neuromorphic architectures.

A Survey of Memristive Threshold Logic Circuits

In this letter, we present an original demonstration of an associative learning neural network inspired by the famous Pavlov's dogs experiment. A single nanoparticle organic memory field effect transistor NOMFET is used to implement each synapse. We show how the physical properties of this dynamic memristive device can be used to perform low-power write operations for the learning and implement short-term association using temporal coding and spike-timing-dependent plasticity-based learning. An electronic circuit was built to validate the proposed learning scheme with packaged devices, with good reproducibility despite the complex synaptic-like dynamic of the NOMFET in pulse regime.

https://hal.archives-ouvertes.fr/hal-00795977/document

Pavlov's dog associative learning demonstrated on synaptic-like organic transistors

A threshold logic gate performs weighted sum of multiple inputs and compares the sum with a threshold We propose spin-memeristor threshold logic (SMTL) gates, which employ a memristive cross-bar array to perform current-mode summation of binary inputs, whereas the low-voltage fast-switching spintronic threshold devices carry out the threshold operation in an energy efficient manner Field-programmable SMTL gate arrays can operate at a small terminal voltage of ∼50 mV, resulting in ultralow power consumption in gates as well as programmable interconnect networks We evaluate the performance of SMTL using threshold logic synthesis Results for common benchmarks show that SMTL-based programmable logic hardware can be more than 100 × energy efficient than the state-of-the-art CMOS field-programmable gate array

Design and Synthesis of Ultralow Energy Spin-Memristor Threshold Logic

Mechanical and magnetic behavior of oligocrystalline Ni–Mn–Ga microwires

Properties of As-Deposited and Heat-Treated Ni-Mn-Ga Magnetic Shape Memory Alloy Processed by Directed Energy Deposition

We present our design exploration of reconfigurable Threshold Logic Gates (TLG) implemented using silver–chalcogenide memristive devices combined with CMOS circuits. Results from simulations and physical circuits are shown. A variety of linearly separable logic functions including AND, OR, NAND, NOR have been realized in discrete hardware using a single-layer TLG. The functionality can be changed between these operations by reprogramming the resistance of the memristive devices.

/pdf/reconfigurable-threshold-logic-gates-using-memristive-2fkxv57ivm.pdf

Reconfigurable Threshold Logic Gates Using Memristive Devices

We present our early design exploration of reconfigurable Threshold Logic Gates (TLG) implemented using Silver-chalcogenide memristive devices combined with CMOS circuits. A variety of linearly separable logic functions including AND, OR, NAND, NOR have been realized in a Matlab-Simulink/Cadence co-simulation using a single-layer TLG. The functionality can be changed between these operations by reprogramming the resistance of the memristive devices.

/pdf/reconfigurable-threshold-logic-gates-using-memristive-1et475xjhk.pdf

Reconfigurable Threshold Logic Gates using memristive devices

A turbocharger control system for an internal combustion engine having first and second turbochargers connected in series includes first and second pressure sensors, and a controller. The first and second pressure sensors are disposed in an air intake of the engine, and are configured to sense boost pressure of the first and second turbochargers, respectively. The controller is configured to receive pressure signals from the first and second pressure sensors, and to control operation of at least one of the first and second turbochargers to maintain a desired boost pressure ratio.

Multi-stage turbo with continuous feedback control

/pdf/application-of-ferromagnetic-shape-memory-alloys-in-power-q1w6cct0ux.pdf

Application of Ferromagnetic Shape-Memory Alloys in Power Generation Devices

Materials scientists make use of image processing tools more and more as technology advances and the data
volume that needs to be analyzed increases. We propose a method to optically measure magnetic eld induced
strain (MFIS) as well as twin boundary movement in Ni 2 MnGa single crystal shape memory alloys to facilitate
spatially resolved tracking of deformation. Current magneto-mechanical experiments used to measure MFIS
can measure strain only in one direction and do not provide information about the movement of individual
twin boundaries. A sequence of images captured from a high resolution camera is analyzed by a boundary
detection algorithm to provide strain data in multiple directions. Subsequent motion detection and Hough feature
extraction provide quantitative information about the location and movement of active twin boundaries.

/pdf/application-of-image-processing-to-track-twin-boundary-448i2ujo0j.pdf

Adrian Rothenbuhler

Papers

Reconfigurable Threshold Logic Gates Using Memristive Devices

Reconfigurable Threshold Logic Gates using memristive devices

Multi-stage turbo with continuous feedback control

Application of Ferromagnetic Shape-Memory Alloys in Power Generation Devices

Application of image processing to track twin boundary motion in magnetic shape memory alloys