Adrian Stefan Avramescu

TL;DR: Estimation of the specimen thickness combined with evaluation of intensity ratios allows quantitative measurement of the composition x and in high-resolution images it is found that the image intensity is well described by simulation if the simulated image is convoluted with a Gaussian with a half-width at half-maximum of 0.07 nm.

TL;DR: Evidence is given for the existence of In rich regions in an InGaN layer which shows signatures of quantum dot emission in microphotoluminescence spectroscopy experiments.

TL;DR: In this paper, the authors define an optoelectronic component as a semiconductor component having an active region that emits or receives light during operation and a sealing material applied by atomic layer deposition on at least one surface region, the sealing material covering the surface region in a hermetically impermeable manner.

TL;DR: In this paper, an epitaxial design and material quality on a c-plane GaN substrate was proposed for green laser diodes with an emission wavelength of 531.7 nm and wall plug efficiency up to 2.3% at 50 mW optical output power.

TL;DR: In this paper, the influence of the indium content, the annealing temperature and the barrier structure on the quantum-well stability was investigated, and it was found that quantum wells with indium contents higher than 20% degrade due to the diffusion of indium atoms.