M
Matthias Sabathil
Researcher at Osram Opto Semiconductors GmbH
Publications - 100
Citations - 1551
Matthias Sabathil is an academic researcher from Osram Opto Semiconductors GmbH. The author has contributed to research in topics: Layer (electronics) & Quantum well. The author has an hindex of 18, co-authored 100 publications receiving 1511 citations.
Papers
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Journal ArticleDOI
On the importance of radiative and Auger losses in GaN-based quantum wells
Jörg Hader,Jerome V. Moloney,Bernhard Pasenow,Stephan W. Koch,Matthias Sabathil,Norbert Linder,Stephan Lutgen +6 more
TL;DR: In this paper, the importance of radiative and Auger carrier losses in InGaN∕GaN quantum wells was investigated in a fully microscopic many-body model and the results showed no significant dependence on details of the well alloy profile.
Journal ArticleDOI
True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power on c-Plane GaN
Adrian Stefan Avramescu,Teresa Lermer,Jens Müller,Christoph Eichler,Georg Bruederl,Matthias Sabathil,Stephan Lutgen,Uwe Strauss +7 more
TL;DR: In this paper, an epitaxial design and material quality on a c-plane GaN substrate was proposed for green laser diodes with an emission wavelength of 531.7 nm and wall plug efficiency up to 2.3% at 50 mW optical output power.
Journal ArticleDOI
Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence
Manfred Binder,Anna Nirschl,Roland Zeisel,Thomas Hager,Hans-Juergen Lugauer,Matthias Sabathil,Dominique Bougeard,Joachim Wagner,Bastian Galler +8 more
TL;DR: In this article, the authors report the direct observation of hot carriers generated by Auger recombination via photoluminescence spectroscopy on tailored (AlGaIn)N multiple quantum well (QW) structures containing alternating green and ultra-violet (UV) emitting (GaIn),N QWs.
Patent
Optoelektronischer halbleiterkörper und verfahren zur herstellung eines solchen
TL;DR: In this paper, an optoelektronischer Halbleiterkorper with einer Halbleiterschichten-folge is presented, in which erste and zweite Anschlussschicht an einer der Vorderseite gegenuberliegenden Ruckseite angeordnet und mittels einer Trennschicht (5) elektrisch gegeneinander isoliert sind.
Journal ArticleDOI
Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates
Bastian Galler,Philipp Drechsel,R. Monnard,Patrick Rode,P. Stauss,S. Froehlich,Werner Bergbauer,Michael Binder,Matthias Sabathil,Berthold Hahn,Joachim Wagner +10 more
TL;DR: In this article, a single quantum well active layer is used to ensure a well-defined active volume which enables the precise determination of the recombination coefficients in the ABC rate model for different emission wavelengths and junction temperatures.