In this study, Bi-Sb thin film structure was prepared by thermal evaporation method. The electrical, optical transmission and structural characteristics of the prepared samples were introduced before and after thermal annealing process. At temperature of 500 °C, the absorption of the structure was improved to reach 97% at near-infrared region. As well, the thermal annealing caused to reduce the bulk resistance of the Bi-Sb thin film structure. The mor-phology of Bi-Sb structure was also improved by thermal annealing as characteristic islands of the structure appear clearly in form hexagonal areas distinct from each other. This study is aiming to examine such structures if they are employed as photonic devices such as photodetectors, LED’s and optical switches.

Afnan K. Yousif

Papers

Effect of Thermal Annealing on the Characteristics of Bi-Sb Thin Film Structure