Semiconductor nanowires have attracted extensive interest as one of the best-defined classes of nanoscale building blocks for the bottom-up assembly of functional electronic and optoelectronic devices over the past two decades. The article provides a comprehensive review of the continuing efforts in exploring semiconductor nanowires for the assembly of functional nanoscale electronics and macroelectronics. Specifically, we start with a brief overview of the synthetic control of various semiconductor nanowires and nanowire heterostructures with precisely controlled physical dimension, chemical composition, heterostructure interface, and electronic properties to define the material foundation for nanowire electronics. We then summarize a series of assembly strategies developed for creating well-ordered nanowire arrays with controlled spatial position, orientation, and density, which are essential for constructing increasingly complex electronic devices and circuits from synthetic semiconductor nanowires. Next, we review the fundamental electronic properties and various single nanowire transistor concepts. Combining the designable electronic properties and controllable assembly approaches, we then discuss a series of nanoscale devices and integrated circuits assembled from nanowire building blocks, as well as a unique design of solution-processable nanowire thin-film transistors for high-performance large-area flexible electronics. Last, we conclude with a brief perspective on the standing challenges and future opportunities.

Nanowire Electronics: From Nanoscale to Macroscale

Drain current versus drain voltage characteristics for an analytical Al0.25Ga0.75N/GaN superlattice MOSFET

Analysis of electron transport in AlGaN/GaN superlattice HEMTs for isotopes 14 N and 15 N

Novel approach for augmented carrier transfer and reduced Fermi level pinning effect in InAs surface quantum dots

Modelling of InAs nanowire and MOSFET under phonon emission and absorption by using NEGF formalism

Study of the carrier transport in presence of backscattering in InAs nanowire based MOSFET after GaN

InAs/GaAs quantum dot solar cells (QDSCs) with n-type delta-doped quantum dots (QDs) have gained immense interest due to their improved open-circuit voltage. Here we report the effect of position-dependent doping on the intermediate band generation-recombination rate through theoretical modelling to analyze the reduced short-circuit current density (JSC) due to doping. A 1-D drift-diffusion model was used to obtain the photovoltaic characteristics. Simulations suggest that the intermediate band's contribution reduces by almost three orders of magnitude for the doped case near the n-doped base at short-circuit conditions compared to the undoped case. We utilized these findings to develop spatially varying doping conditions. The structure with doped QDs exhibit the highest power conversion efficiency (PCE) but minor JSC enhancement. Comparatively, when the QDs near the n-doped base are kept undoped, better results are obtained at low bias, and a JSC enhancement of 0.322 mA/cm2 is observed. With the increase in bias above 0.68V, recombination becomes dominant in the proposed partially doped structure. These observations are backed by the occupation probability of the QDs, electron and hole carrier dynamics, and electric field distribution along the intrinsic region. With such an arrangement, PCE is enhanced by 0.69% compared to that of the undoped QDSC.

Effect of Position-Dependent Doping on Intermediate Band Generation-Recombination Rate in InAs/GaAs Quantum Dot Solar Cell

In this paper authors have studied the variation of mobility with device length due to total scattering and ballistic transport in AlGaN/GaN superlattice structure. Here comparisons have also been made between mobility due to total scattering and ballistic transport. Subsequently comparative analysis of power dissipation has also been studied here.

Ahna Sharan

Papers

Study of the carrier transport in presence of backscattering in InAs nanowire based MOSFET after GaN

Effect of Position-Dependent Doping on Intermediate Band Generation-Recombination Rate in InAs/GaAs Quantum Dot Solar Cell

Mobility and power dissipation due to total phonon scatterings compared with ballistic transport in AlGaN/GaN superlattice

Impact of effective capture cross-section on device performance of InAs/GaAs quantum dot solar cell