Journal ArticleDOI
Study of the carrier transport in presence of backscattering in InAs nanowire based MOSFET after GaN
TLDR
In this article, the fetching of a single-flux scattering theory of the InAs nanowire based MOSFET has been presented and the backscattering coefficient has been studied for 1, 5, and 10-nm radius.About:
This article is published in Superlattices and Microstructures.The article was published on 2015-12-01. It has received 8 citations till now. The article focuses on the topics: Nanowire & MOSFET.read more
Citations
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Journal ArticleDOI
Nanowire Electronics: From Nanoscale to Macroscale
TL;DR: A comprehensive review of the continuing efforts in exploring semiconductor nanowires for the assembly of functional nanoscale electronics and macroelectronics, including a unique design of solution-processable nanowire thin-film transistors for high-performance large-area flexible electronics.
Journal ArticleDOI
Drain current versus drain voltage characteristics for an analytical Al0.25Ga0.75N/GaN superlattice MOSFET
TL;DR: In this article, the authors have studied the variation of mobility with lattice temperature in Nitride based super-lattice MOSFETs and compared the results with temperature dependent measured mobility of two dimensional electrons in AlGaN/GaN super-attice structure.
Journal ArticleDOI
Analysis of electron transport in AlGaN/GaN superlattice HEMTs for isotopes 14 N and 15 N
Kaushik Mazumdar,Rajeev Kumar Ranjan,Ravi Shankar,Ahna Sharan,Bindu Priyadarshini,Mainak Kundu,Aniruddha Ghosal +6 more
TL;DR: In this article, the transport properties of electron in isotopically mixed Ga 14 N 15 N alloy channels have been studied and different ratio of isotopes has been considered and their effect on the alloy scattering phenomenon of specimen is studied.
Journal ArticleDOI
Modelling of InAs nanowire and MOSFET under phonon emission and absorption by using NEGF formalism
TL;DR: In this article, the performance of InAs nanowire (NW) and its based superlattice MOSFET under optical phonon absorption and emission was compared. And the results indicated fluctuations in the NW characteristics like density of states (DOS), scattering rate, mobility, effective transmission and current.
Journal ArticleDOI
Modern comparative approach for carrier transport in InAlN/AlN superlattice device with characteristics and modelling using nitride (14N,15N) isotopes
TL;DR: In this paper, the authors have considered the Al14N15N with different ratio of 14N and 15N for the analysis owing to considerable interest in superlattice structures of large band gap semiconductors having various favorable material properties such as very high thermal conductivity, high carrier mobility and wide bandwidth operation.
References
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Journal ArticleDOI
High Performance Silicon Nanowire Field Effect Transistors
TL;DR: In this article, the influence of source-drain contact thermal annealing and surface passivation on key transistor properties was examined, and it was shown that thermal annaling and passivation of oxide defects using chemical modification can increase the average transconductance from 45 to 800 nS and average mobility from 30 to 560 cm 2 /V
Journal ArticleDOI
Gallium Nitride-Based Nanowire Radial Heterostructures for Nanophotonics
TL;DR: In this paper, a new and general strategy for efficient injection of carriers in active nanophotonic devices involving the synthesis of well-defined doped core/shell/shell (CSS) nanowire heterostructures was reported.
Journal ArticleDOI
Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics
Dunwei Wang,Qian Wang,Ali Javey,Ryan Tu,Hongjie Dai,Hyoungsub Kim,Paul C. McIntyre,Tejas Krishnamohan,Krishna C. Saraswat +8 more
TL;DR: In this article, single-crystal Ge nanowires are synthesized by a low-temperature (275°C) chemical vapor deposition (CVD) method, and Boron doped p-type GeNW field effect transistors (FETs) with back-gates and thin SiO2 (10 nm) gate insulators are constructed.
Journal ArticleDOI
Diameter-dependent electron mobility of InAs nanowires.
Alexandra C. Ford,Johnny C. Ho,Johnny C. Ho,Johnny C. Ho,Yu-Lun Chueh,Yu-Lun Chueh,Yu-Lun Chueh,Yu-Chih Tseng,Yu-Chih Tseng,Yu-Chih Tseng,Zhiyong Fan,Zhiyong Fan,Zhiyong Fan,Jing Guo,Jing Guo,Jing Guo,Jeffrey Bokor,Jeffrey Bokor,Jeffrey Bokor,Ali Javey +19 more
TL;DR: Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowires radius, serving as a versatile and powerful platform for in-depth characterization of nanoscale, electronic materials.
Journal ArticleDOI
InAs/InP Radial Nanowire Heterostructures as High Electron Mobility Devices
TL;DR: The rational design and synthesis of InAs/InP core/shell NW heterostructures with quantum-confined, high-mobility electron carriers opens up opportunities for fundamental and applied studies of quantum coherent transport and high-speed, low-power nanoelectronic circuits.