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Ajeet Rohatgi
Researcher at Georgia Institute of Technology
Publications - 513
Citations - 11785
Ajeet Rohatgi is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Silicon & Passivation. The author has an hindex of 51, co-authored 500 publications receiving 11218 citations. Previous affiliations of Ajeet Rohatgi include Carnegie Mellon University & Westinghouse Electric.
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Proceedings ArticleDOI
High efficiency selective emitter enabled through patterned ion implantation
Russell J. Low,Atul Gupta,Hans-Joachim L. Gossmann,James Mullin,Vijay Yelundur,Ben Damiani,Vinodh Chandrasekaran,D. L. Meier,Bruce McPherson,Ajeet Rohatgi +9 more
TL;DR: In this paper, the benefits of patterned ion implantation to simplify process flows while enabling a road map to high efficiency cell architectures with lower cost/Watt is discussed and the results from the first test run are presented.
Journal ArticleDOI
Ion-implanted and screen-printed large area 20% efficient N-type front junction Si solar cells
Young-Woo Ok,Ajay Upadhyaya,Yuguo Tao,Francesco Zimbardi,Kyungsun Ryu,Moon Hee Kang,Ajeet Rohatgi +6 more
TL;DR: In this article, the fabrication of front junction n-type Si solar cells on 239 cm 2 Cz using ion implanted boron emitter and phosphorus back surface field (BSF) in combination with screen printed metallization was reported.
Proceedings ArticleDOI
Record high 18.6% efficient solar cell on HEM multicrystalline material
TL;DR: In this article, the back surface recombination velocity (S/sub b/ ) of multicrystalline silicon (mc-Si) was reduced by incorporating a deeper aluminum BSF.
Journal ArticleDOI
High efficiency multicrystalline silicon solar cells
TL;DR: A detailed investigation of quality enhancement techniques, such as PECVD SiO2/SiN deposition and forming gas anneal (FGA) for defect passivation, and A1 treatment for defect and impurity gettering, was conducted on several promising multicrystalline Si materials as discussed by the authors.
Journal ArticleDOI
Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells
Suppawan Kleekajai,Fan Jiang,Michael Stavola,Vijay Yelundur,Kenta Nakayashiki,Ajeet Rohatgi,Giso Hahn,Sven Seren,J. P. Kalejs +8 more
TL;DR: In this paper, a model system in which H could be directly detected in a floating-zone Si that contained Pt impurities that act as traps for H was used as a model in which the concentration and indiffusion depth of H were determined.