Y
Young-Woo Ok
Researcher at Georgia Institute of Technology
Publications - 104
Citations - 2122
Young-Woo Ok is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Silicon & Passivation. The author has an hindex of 23, co-authored 98 publications receiving 1930 citations. Previous affiliations of Young-Woo Ok include Gwangju Institute of Science and Technology & Korea University.
Papers
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Journal ArticleDOI
Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films
Tae Youb Kim,Nae-Man Park,Kyung-Hyun Kim,Gun Yong Sung,Young-Woo Ok,Tae Yeon Seong,Cheol Jong Choi +6 more
TL;DR: In this article, the size and structure of silicon nanocrystals were confirmed by high-resolution transmission electron microscopy and the photoluminescence peak energy as E(eV)=1.16+11.8∕d2 is evidence for the quantum confinement effect.
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Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers
A.B.M.A. Ashrafi,Akio Ueta,Adrian Avramescu,Hidekazu Kumano,Ikuo Suemune,Young-Woo Ok,Tae Yeon Seong +6 more
TL;DR: In this paper, the growth and characterization of zinc-blende ZnO on GaAs(001) substrates was reported, which showed bright band-edge luminescence at room temperature.
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High-Throughput Ion-Implantation for Low-Cost High-Efficiency Silicon Solar Cells
Ajeet Rohatgi,Daniel L. Meier,Bruce McPherson,Young-Woo Ok,Ajay Upadhyaya,Jiun-Hong Lai,Francesco Zimbardi +6 more
TL;DR: In this paper, the use of ion-implantation for high-volume manufacturing of silicon solar cells is presented, which provides a unique opportunity to obtain grid-parity because it simplifies the fabrication of advanced cell structures.
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Fabrication of ZnO quantum dots embedded in an amorphous oxide layer
TL;DR: In this paper, the authors show that the ZnO quantum dots are formed and embedded in the amorphous silicon oxide interfacial layer when annealed at 850°C.
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Temperature dependence of photoluminescence of InGaN films containing In-rich quantum dots
Yong-Tae Moon,Dong-Joon Kim,Jinsub Park,Jeong-Tak Oh,Ji-Myon Lee,Young-Woo Ok,Hyun-Chul Kim,Seong-Ju Park +7 more
TL;DR: In this paper, the temperature dependence of the photoluminescence (PL) of InGaN films, grown by metalorganic chemical vapor deposition, has been investigated, and it was shown that the activation energy for the thermal quenching of PL intensity in the thin film which contains quantum dot-like In-rich regions is larger than that in the strained thin film containing composition-fluctuated regions.