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Ajeet Rohatgi
Researcher at Georgia Institute of Technology
Publications - 513
Citations - 11785
Ajeet Rohatgi is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Silicon & Passivation. The author has an hindex of 51, co-authored 500 publications receiving 11218 citations. Previous affiliations of Ajeet Rohatgi include Carnegie Mellon University & Westinghouse Electric.
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Patent
Solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation
Daniel L. Meier,Ajeet Rohatgi +1 more
TL;DR: In this article, a thin silicon solar cell is described, which consists of a first region having a p-n homojunction, a second region that creates heter-junction surface passivation, and a third region that creating heter-jounction surface polygonal passivation.
Patent
Methods for passivating silicon devices at low temperature to achieve low interface state density and low recombination velocity while preserving carrier lifetime
Zhizhang Chen,Ajeet Rohatgi +1 more
TL;DR: In this paper, a photo-assisted rapid thermal annealing (RTA) process was developed to achieve a very low SiO x /Si interface state density, low recombination velocity S ( 5 ms) for oxides deposited on silicon substrates at low temperature.
Journal ArticleDOI
26.7% Efficient 4-Terminal Perovskite–Silicon Tandem Solar Cell Composed of a High-Performance Semitransparent Perovskite Cell and a Doped Poly-Si/SiO x Passivating Contact Silicon Cell
Ajeet Rohatgi,Kai Zhu,Jinhui Tong,Dong Hoe Kim,Elsa Reichmanis,Brian Rounsaville,Vivek Prakash,Young-Woo Ok +7 more
TL;DR: In this article, the authors demonstrate a 26.7% perovskite-Si 4T tandem cell comprising a highly efficient 17.8% CsFAMAPbIBr semitransparent, 1.63-eV bandgap perovsite top cell, and a ≥ 22% efficiency n-type Si bottom cell fabricated with a conventional boron diffused emitter on the front and carrier selective n+ poly-Si/SiOx passivated contact on the rear.
Journal ArticleDOI
High‐efficiency (19%) screen‐printed textured cells on low‐resistivity float‐zone silicon with high sheet‐resistance emitters
TL;DR: In this paper, a 19% efficient 4 cm 2 screen-printed (SP) textured cells were fabricated on 100 Ω/sq emitters using a rapid single-step belt furnace firing process.
Patent
Method for low temperature plasma enhanced chemical vapor deposition (PECVD) of an oxide and nitride antireflection coating on silicon
Zhizhang Chen,Ajeet Rohatgi +1 more
TL;DR: In this article, a sequential plasma-enhanced chemical vapor deposition (PECVD) of SiN and SiOx produces a very effective double-layer antireflection coating, which improves the short-circuited current (Jsc), open-circuit voltage (Voc), and efficiency (Eff) for silicon cells with oxide surface passivation.