There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manufactured by a step different from a source signal line in a driver circuit portion. The power supply line in the pixel portion is manufactured by a step different from a power supply line led on a substrate. A terminal is similarly plated to made the resistance reduction. It is desirable that a wiring before plating is made of the same material as a gate electrode and the surface of the wiring is plated to form the source signal line or the power supply line.

Light emitting device and method of manufacturing the same

A valve housing has a communication passage communicating a suction port of the compressor with a crank chamber of the compressor. A valve element opens and closes the communication passage, and a spring member resiliently biases the valve element toward the closed position. A pressure actuated unit moves the valve element toward the open position by a suction pressure of the compressor. The spring member includes a spring made of a temperature responsive material. The spring decreases in its resilient force in an opening direction of the valve element with increase of an outer-air temperature. The spring member has a primary spring made of an ordinary resilient material for resiliently biasing the valve element toward the closed position and a correction spring made of a material having a temperature positive characteristic. The correction spring provides a correction spring force smaller than a primary force of the primary spring in the opposite direction to the primary force. The combined spring force of the primary spring and the correction spring acting on the valve element.

Control valve for variable displacement compressor

A light-shielding film 2 is formed on a transparent substrate 1. A hard mask film 3 is formed on this light-shielding film 2. The entire hard mask film 3 is made of a chromium-containing material including tin. The film made a chromium-containing material including tin can cause a significant increase in the etching rate at the time of chlorine-containing dry etching. Furthermore, comparing with a film made of a chromium-containing material in which part of chromium is replaced with a light element, the above film has an equal or higher level of etching resistance to fluorine-dry etching. Thus, burden on a photoresist at the time of etching the chromium-containing material film can be reduced. Therefore, high-precision pattern transfer can be performed even in the case that the resist film is thinned.

Photomask blank and method for manufacturing photomask

A light-shieldable film (12) is formed on one principal plane of an optically transparent substrate (11), and the light-shieldable film (12) has a first light-shieldable film (13) and a second light-shieldable film (14) overlying the first light-shieldablefilm (13). The first light-shieldable film (13) is a film that is not substantially etched by fluorine-based(F-based)dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film (14) is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.

Photomask blank, photomask and fabrication method thereof

A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Photomask blank and photomask making method

PURPOSE:To provide the phase shift mask having high quality and the process for production thereof by decreasing processes at the time of producing the phase shift mask and to provide the exposure method using the phase shift mask CONSTITUTION:A second light transparent part 4 of the phase shift mask 200 is composed of molybdenum silicide oxynitride or molybdenum silicide oxide 4, of which the phase difference attains 180 deg and transmittance is 5 to 40% A molybdenum silicide oxynitricle film or molybdenum silicide oxide film is formed by using a sputtering method in the production stage for the second light transparent part 4 As a result, the second light transparent part is formed by using the conventional sputtering device and since the etching stage of the phase shifter parts is just once, the probability of generating defects and errors in the production stage is lowered

Phase shift mask and its production and exposure method using the phase shift mask

PURPOSE: To provide a phase-shift photomask blank suitable to UV exposure and highly resistant to chemicals. CONSTITUTION: Gaseous nitrogen monoxide is added by 2.65-6vol.%, then a molybdenum silicide target is sputtered, and a molybdenum silicide oxynitride film is formed on a transparent substrate. This film is suitable to the phase-shift film in a KrF excimer laser wavelength and highly resistant to chemicals. Since the chemical resistance is especially improved when the proportion of the gaseoous nitrogen monoxide is low, the film is used as the protective film of the phase-shift film by adding 0.5-6vol.%. The process variation of the transmittance is reduced when the film is heat-treated at >=200 deg.C, and the transmittance is increased in the exposure wavelength.

Production of phase-shift photomask blank, phase-shift photomask blank and phase-shift photomask

PROBLEM TO BE SOLVED: To provide the phase shift photomask, capable of the satisfied examination, which can obtain sufficient transmitivity for the exposure wavelength of the sort wavelength to be used and has the suitable transmitvity also for the defective examination wavelength, and to provide phase shift photomask blanks for manufacturing the mask and the manufacturing method of the semiconductor device using this mask. SOLUTION: In a attenuated type phase shift film consisting of two layers, the refractive index of the upper film is set smaller than the refractive index of the sublayer film, the transmitivity in the exposure wavelength is set high, and in the attenuated type phase shift film consisting of three layers, the refractive index of the film of the intermediate layer is set smaller than the refractive index of the upper layer and the sublayer film, and the transmitivity in the defective examination wavelength is lowered. In the attenuated type phase shift film consisting of three-layers or more, the refractive index of the film of the uppermost layer is set smaller than the refractive index of the sublayer direct film, and the trasmitivity in the exposure wavelength is set high. COPYRIGHT: (C)2001,JPO

Phase shift photomask blank, phase shift photomask, and manufacturing method of semiconductor device

PURPOSE:To detect the defects of the phase-shift mask with a conventional defect inspection instrument without lowering the performance as a phase shift mask by using the phase shifter part consisting of a combination of a single- layer film and a transmission film. CONSTITUTION:In this mask, the transmission film 10 which has a prescribed transmissivity and pattern is formed on the principal surface of the quartz substrate 1 that transmits the light for exposure and consists of e.g. a molybdenum silicide film. Also, the single-layer film 4 which consists of an almost homogeneous material that shifts the phase angle of the light for exposure by 180 deg. in combination with the film 10 and has a 4 to 20% transmissivity is formed on the film 10. The single-layer film 4 consists of a molybdenum silicide oxide film or molybdenum silicide oxide nitride film, etc. The phase shifter part 20 comprises this single-layer film 4 and the transmission film 10. Thus, the dependence of the transmissivity of the phase shifter part 20 on the change in wavelength of the light to be transmitted can be reduced.

Phase-shift mask and its production

PROBLEM TO BE SOLVED: To provide a phase shift photomask blank having excellent chemical resistance and optical properties, a phase shift photomask fabricated by using the photomask blank, fabrication processes of the photomask blank and photomask and equipment for fabrication of the photomask blank. SOLUTION: The fabrication process of this phase shift photomask blank is for forming thin films on a substrate by a reactive sputtering method, wherein the substrate is passed on a sputtering target at least four times to form homogeneous thin films 81, 82, 83 and 84, gaseous NO is used as a reactive gas, a mixed target consisting of molybdenum and silicon is used as a sputtering target, also a transparent substrate is used as a substrate on which the thin films 81, 82, 83 and 84 should be formed and as a result, an optical-transmissive film capable of transmitting intense light is formed on the transparent substrate. Further, in the fabrication, each of the thin films 81, 82, 83 and 84 is formed through an aperture having sufficiently greater length along the transfer direction of the substrate while allowing even regions where the maximum value of the deposition rate of a target component is ≤90% to contribute to the film formation. The phase shift photomask blank thus fabricated is performed to pattern forming treatment. COPYRIGHT: (C)2000,JPO

Akihiko Toku

Papers

Phase shift mask and its production and exposure method using the phase shift mask

Production of phase-shift photomask blank, phase-shift photomask blank and phase-shift photomask

Phase shift photomask blank, phase shift photomask, and manufacturing method of semiconductor device

Phase-shift mask and its production

Phase shift photomask blank, phase shift photomask, their fabrication and equipment for fabrication of the same photomask blank