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Patent

Phase shift mask and its production and exposure method using the phase shift mask

TLDR
In this article, the phase shift mask has high quality and the process for production thereof by decreasing processes at the time of producing the phase shifter mask and to provide the exposure method using the Phase Shift Mask.
Abstract
PURPOSE:To provide the phase shift mask having high quality and the process for production thereof by decreasing processes at the time of producing the phase shift mask and to provide the exposure method using the phase shift mask CONSTITUTION:A second light transparent part 4 of the phase shift mask 200 is composed of molybdenum silicide oxynitride or molybdenum silicide oxide 4, of which the phase difference attains 180 deg and transmittance is 5 to 40% A molybdenum silicide oxynitricle film or molybdenum silicide oxide film is formed by using a sputtering method in the production stage for the second light transparent part 4 As a result, the second light transparent part is formed by using the conventional sputtering device and since the etching stage of the phase shifter parts is just once, the probability of generating defects and errors in the production stage is lowered

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Patent

Photomask blank and method for manufacturing photomask

TL;DR: In this paper, a hard mask film made of a chromium-containing material including tin can cause a significant increase in the etching rate at the time of chlorine-containing dry etching.
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Photomask blank, photomask and fabrication method thereof

TL;DR: A light-shieldable film is a film that is not substantially etched by fluorine-based(F-based)dry etching and is primarily composed of chromium oxide, chromium nitride, chromIUM oxynitride or the like.
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Photomask blank and photomask making method

TL;DR: A photomask blank is composed of a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching as mentioned in this paper.
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Halftone phase shift mask and method for manufacturing the same

TL;DR: In this article, a halftone phase shift mask has an engraved portion in a substrate transparent to exposure light, and is characterized in that a light shielding film provided in a portion adjacent to the engraved portion or in a peripheral portion of the substrate includes a material made of a material which can be etched in an etching process using an etch gas essentially comprising a fluorine-based gas.
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Halftone phase shift mask blank , halftone phase shift mask, and pattern transfer method

TL;DR: In this article, a halftone phase shift mask blank consisting of a substrate, a light absorbing film, and a phase shifter film is presented, where at least one layer of the mask blank contains at least 90 atom % of silicon and a plurality of metal elements.
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