A light-shielding film 2 is formed on a transparent substrate 1. A hard mask film 3 is formed on this light-shielding film 2. The entire hard mask film 3 is made of a chromium-containing material including tin. The film made a chromium-containing material including tin can cause a significant increase in the etching rate at the time of chlorine-containing dry etching. Furthermore, comparing with a film made of a chromium-containing material in which part of chromium is replaced with a light element, the above film has an equal or higher level of etching resistance to fluorine-dry etching. Thus, burden on a photoresist at the time of etching the chromium-containing material film can be reduced. Therefore, high-precision pattern transfer can be performed even in the case that the resist film is thinned.

Photomask blank and method for manufacturing photomask

A light-shieldable film (12) is formed on one principal plane of an optically transparent substrate (11), and the light-shieldable film (12) has a first light-shieldable film (13) and a second light-shieldable film (14) overlying the first light-shieldablefilm (13). The first light-shieldable film (13) is a film that is not substantially etched by fluorine-based(F-based)dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film (14) is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.

Photomask blank, photomask and fabrication method thereof

A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Photomask blank and photomask making method

A blank for halftone phase shift photomask is disclosed. The blank has a transparent substrate, a halftone phase shift layer and a light shielding film, the halftone phase shift layer and the light shielding film being layered in this order on the transparent substrate, and the l light shielding film is a single layered or multiple layered film which has a layer of tantalum.

Halftone phase shift photomask and blank for halftone phase shift photomask

PROBLEM TO BE SOLVED: To provide a halftone phase shift mask that can significantly improve CD (critical dimension) performance, and to provide a method for manufacturing the mask. SOLUTION: The halftone phase shift mask has an engraved portion in a substrate transparent to exposure light so as to control the phase of transmitted light, and is characterized in that a light shielding film provided in a portion adjacent to the engraved portion of the substrate or in a peripheral portion of the substrate includes a film (A) made of a material which can be etched in an etching process using an etching gas essentially comprising a fluorine-based gas. COPYRIGHT: (C)2007,JPO&INPIT

Halftone phase shift mask and method for manufacturing the same

PURPOSE:To provide the phase shift mask having high quality and the process for production thereof by decreasing processes at the time of producing the phase shift mask and to provide the exposure method using the phase shift mask CONSTITUTION:A second light transparent part 4 of the phase shift mask 200 is composed of molybdenum silicide oxynitride or molybdenum silicide oxide 4, of which the phase difference attains 180 deg and transmittance is 5 to 40% A molybdenum silicide oxynitricle film or molybdenum silicide oxide film is formed by using a sputtering method in the production stage for the second light transparent part 4 As a result, the second light transparent part is formed by using the conventional sputtering device and since the etching stage of the phase shifter parts is just once, the probability of generating defects and errors in the production stage is lowered

Phase shift mask and its production and exposure method using the phase shift mask

PURPOSE: To provide the etching method which makes it possible to obtain a photomask having high accuracy by using a dry etching device having rotating magnetic fields. CONSTITUTION: A photomask substrate 11 is mounted on an RF electrode 10 surface in an etching chamber 2 of the dry etching device 1 having the rotating magnetic fields by electromagnets 5 to 8 and a pattern material is etched by reactive ion etching under the conditions of 50 to 150 gauss magnetic field intensity of the electromagnets, 0.03 to 0.3Torr reactive gaseous pressure in the etching chamber and 0.20 to 0.32W/cm 2 RF electric power density of the electrodes. The controllability of plasma is good and selection ratios are improved. The pattern material of the photomask is subjected to the etching with small CD loss, good intra-surface uniformity and high accuracy by setting magnetic field intensity, reactive gaseous pressure and RF electric power density to the values described above. COPYRIGHT: (C)1994,JPO

Dry etching method for photomask

PURPOSE: To provide the phase shift mask which enhances the accuracy of a transferred image at the time of exposing and decreases the damages to a substrate at the time of etching and the process for production of this mask. CONSTITUTION: A phase shifter 11a consisting of the level difference part 13 of a transparent film 4 is formed in the boundary side surface part of a light shielding film 10 and a light transmissive part 20. The light shielding film 10 is constituted of a first light shielding film 2 and second light shielding film 3 varying in etching rate. As a result, the thickness of the level difference part 13 changes gradually from the light shielding film 10 to the light transmissive part 20 and, therefore, the continuous changing of the phase difference of light is possible. The surface of the quartz substrate 1 is etched without giving the damages by the etching. COPYRIGHT: (C)1994,JPO&Japio

弥一郎渡壁

Papers

Phase shift mask and its production and exposure method using the phase shift mask

Dry etching method for photomask

Phase shift mask and its production

弥一郎 渡壁

Papers

Phase shift mask and its production and exposure method using the phase shift mask

Dry etching method for photomask

Phase shift mask and its production

弥一郎渡壁