信行 吉岡

TL;DR: In this article, the phase shift mask has high quality and the process for production thereof by decreasing processes at the time of producing the phase shifter mask and to provide the exposure method using the Phase Shift Mask.

TL;DR: In this article, the authors propose to make the distribution of conductivity along both upper and lower directions of an electrode material to be obtained uniformly improvable and simultaneously any deformation such as a warp or the like preventable by superposing an infiltrating material on top and bottom of an infiltration base material, and infiltrating this infiltrate material into the infiltrate base material from both upper or lower sides.

TL;DR: In this paper, a phase shift mask which satisfies optical characteristics and chemical resistance, has high pattern precision, and develops no pattern crack was provided. But, the phase shift masks were made with a single composition, and the side surfaces of shifter parts were raised almost vertically from transparent bases.

TL;DR: In this paper, a phase shift photomask blank was constructed using a molybdenum silicide target on a transparent substrate, which is suitable for the phase shift film in a KrF excimer laser wavelength and highly resistant to chemicals.

TL;DR: In this paper, the attenuation type phase shift mask is used to prevent exposure to regions adjacent to a normal region in the case of continuously executing exposure under movement by forming attenuation-type phase shift patterns having patterns smaller than the resolution threshold of an exposure device.