Showing papers by "Alexandros T. Demos published in 2014"

Adhesion layer to minimize dielectric constant increase with good adhesion strength in a PECVD process

Abstract: Embodiments of the present invention provide a film stack and method for depositing an adhesive layer for a low dielectric constant bulk layer without the need for an initiation layer. A film stack for use in a semiconductor device comprises of a dual layer low-K dielectric deposited directly on an underlying layer. The dual low-K dielectric consists of an adhesive layer deposited without a carbon free initiation layer.

Uv curing process to improve mechanical strength and throughput on low-k dielectric films

Abstract: A low k porous dielectric film with improved mechanical strength and methods for making the same are disclosed herein. A method of forming a dielectric layer can include positioning a substrate in a processing chamber, delivering a deposition gas to the processing chamber, depositing a dense organosilicon layer using the deposition gas on the surface of the substrate, the dense organosilicon layer comprising a porogenic carbon, forming a pore-forming plasma from a reactant gas, exposing the dense organosilicon layer to the pore-forming plasma to create a porous organosilicon layer, wherein the pore-forming plasma removes at least a portion of the porogenic carbon and exposing the porous organosilicon layer to ultraviolet (UV) radiation.

Post treatment for dielectric constant reduction with pore generation on low K dielectric films

Abstract: A method and apparatus for depositing a low K dielectric film with one or more features is disclosed herein. A method of forming a dielectric layer can include positioning a substrate in a processing chamber, delivering a deposition gas to the processing chamber, depositing a dense organosilicon layer using the deposition gas on the surface of the substrate, the dense organosilicon layer comprising a porogenic carbon, transferring a pattern into the dense organosilicon layer, forming a pore-forming plasma from a reactant gas, exposing the dense organosilicon layer to the pore-forming plasma to create a porous organosilicon layer, wherein the pore-forming plasma removes at least a portion of the porogenic carbon and exposing the porous organosilicon layer to a desiccating post treatment.

Uv-assisted removal of metal oxides in an ammonia-containing atmosphere

Abstract: A method for removing copper oxides from a substrate with one or more copper features is disclosed herein. The method can include positioning a substrate comprising one or more copper and dielectric containing structures in a processing chamber delivering a cleaning gas comprising ammonia to the processing chamber; and exposing the copper and dielectric containing structure to the cleaning gas and ultraviolet (UV) radiation concurrently.

Air-gap structure formation with ultra low-k dielectric layer on pecvd low-k chamber

Abstract: Methods for reducing the k value of a layer using air gaps and devices produced by said methods are disclosed herein. Methods disclosed herein can include depositing a carbon containing stack over one or more features in a substrate, depositing a porous dielectric layer over the carbon containing stack, and curing the substrate to volatilize the carbon containing stack. The resulting device includes a substrate with one or more features formed therein, a porous dielectric layer formed over the features with an air gap formed in the features.

Enhancing electrical property and uv compatibility of ultrathin blok barrier film

Abstract: Embodiments described herein generally relate to the formation of a UV compatible barrier stack. Methods described herein can include delivering a process gas to a substrate positioned in a process chamber. The process gas can be activated to form an activated process gas, the activated process gas forming a barrier layer on a surface of the substrate, the barrier layer comprising silicon, carbon and nitrogen. The activated process gas can then be purged from the process chamber. An activated nitrogen-containing gas can be delivered to the barrier layer, the activated nitrogen-containing gas having a N 2 :NH 3 ratio of greater than about 1:1. The activated nitrogen-containing gas can then be purged from the process chamber. The above elements can be performed one or more times to deposit the barrier stack.

Post treatment for constant reduction with pore generation on low-k dielectric films

Abstract: A method and apparatus for depositing a low K dielectric film with one or more features is disclosed herein. A method of forming a dielectric layer can include positioning a substrate in a processing chamber, delivering a deposition gas to the processing chamber, depositing a dense organosilicon layer using the deposition gas on the surface of the substrate, the dense organosilicon layer comprising a porogenic carbon, transferring a pattern into the dense organosilicon layer, forming a pore-forming plasma from a reactant gas, exposing the dense organosilicon layer to the pore-forming plasma to create a porous organosilicon layer, wherein the pore-forming plasma removes at least a portion of the porogenic carbon and exposing the porous organosilicon layer to a desiccating post treatment.

Method to detect valve deviation

Abstract: Methods for detecting valve leakage and apparatus for the same are provided. In one embodiment, a method for detecting a valve leakage includes flowing a gas through a diverter valve, determining a pressure in a gas source provided to the diverter valve, comparing the determined pressure value with an expected pressure value, and generating a signal in response to the comparison.