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Alexandros T. Demos
Researcher at Applied Materials
Publications - 60
Citations - 1701
Alexandros T. Demos is an academic researcher from Applied Materials. The author has contributed to research in topics: Dielectric & Layer (electronics). The author has an hindex of 15, co-authored 60 publications receiving 1701 citations.
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Patent
Pulse method of oxidizing sidewall dielectrics for high capacitance applications
TL;DR: In this paper, a memory cell is constructed by forming a feature having sidewalls in a first dielectric material and forming a first conductive material on the sidewalls of the feature.
Patent
Enhancing electrical property and uv compatibility of barrier film
TL;DR: In this paper, a process gas can be activated to form an activated process gas, the process gas forming a barrier layer on a surface of the substrate, the barrier layer comprising silicon, carbon and nitrogen.
Patent
Enhancement of modulus and hardness for uv-cured ultra low-k dielectric films
TL;DR: In this paper, the authors describe a method for processing a dielectric film on a substrate with UV energy, where a pre-deposition is performed at a first temperature to initiate a cross-linking process and after a first predetermined time, the temperature of the precursor film is increased to a second temperature for a second predetermined time to remove porogen molecules.
Patent
Air-gap structure formation with ultra low-k dielectric layer on pecvd low-k chamber
TL;DR: In this paper, the authors proposed methods for reducing the k value of a layer using air gaps and devices produced by said methods. But these methods require a substrate with one or more features formed therein, a porous dielectric layer formed over the features with an air gap formed in the features.
Patent
Enhancing electrical property and uv compatibility of ultrathin blok barrier film
TL;DR: In this paper, a process gas can be activated to form an activated process gas, the process gas forming a barrier layer on a surface of the substrate, the barrier layer comprising silicon, carbon and nitrogen.