Handbook of thin film technology

The effects of heat treatment on optical, structural, electrochromic and bonding properties of Nb2O5 thin films

A combined coating strategy based on atomic layer deposition for enhancement of corrosion resistance of AZ31 magnesium alloy

Accelerated Publication: Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories

https://hal.archives-ouvertes.fr/hal-02396239/document

Investigation of the initial deposition steps and the interfacial layer of Atomic Layer Deposited (ALD) Al2O3 on Si

Growth, structure and properties of sputtered niobium oxide thin films

The effect of argon pressure, residual oxygen and exposure to air on the electrical and microstructural properties of sputtered chromium thin films

A low-temperature atomic layer deposition technique for high-κ dielectric films on GaN templates was investigated for MOS applications. This improved growth method produced capacitance densities and a field effect mobility approaching 375 cm2/Vs for ZrO2 and 250 cm2/Vs for HfO2 films on GaN. Furthermore, the low density of dielectric-semiconductor interface traps confirmed a reliable cohesion between the high-κ and GaN. The improved gate dielectric deposition technique has the capabilities to improve the overall quality of GaN-based MOSFETs.

Electrical Comparison of ${\rm HfO}_{2}$ and ${\rm ZrO}_{2}$ Gate Dielectrics on GaN

ZrO2 has been deposited on GaN by Atomic Layer Deposition. Multiple Metal-Oxide-Semiconductor Capacitors with 4.4 nm, 5.4 nm, and 8.5 nm of ZrO2 oxide were fabricated with Cr electrodes. Capacitance measurements produce capacitance densities as high as 3.8 μF/cm2. Current densities of 0.88 A/cm2 at 1 V for the 4.4 nm oxides and hysteresis values of less than 6 mV were observed for the 5.8 nm oxide, indicating an interfacial Dit not greater than 6.4 × 1010 cm2. Temperature dependent current measurements revealed no signature Poole-Frankel component. Comprehensive assessment of these measurements indicates a low defect density oxide formed on GaN with a low number of interface states.

ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition

This paper presents a capacitance model and mobility extraction method through the use of tapered transmission line theory for accumulation-mode MOSCAP test structures. The analytical model accounts for the discrepancies commonly found when measuring the capacitance of nontraditional MOSCAP architectures. Through fabrication of a planar MOSCAP, this model accurately reproduced consistent capacitance density measurements for several device dimensions and high-κ dielectric thicknesses. In this paper, the theoretical basis of the model extracts the effective electron mobility of the accumulation channel in the semiconductor without fabricating a transistor.

Ali Foroughi-Abari

Papers

Growth, structure and properties of sputtered niobium oxide thin films

The effect of argon pressure, residual oxygen and exposure to air on the electrical and microstructural properties of sputtered chromium thin films

Electrical Comparison of ${\rm HfO}_{2}$ and ${\rm ZrO}_{2}$ Gate Dielectrics on GaN

ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition

Capacitance Modeling and Characterization of Planar MOSCAP Devices for Wideband-Gap Semiconductors With High- $\kappa$ Dielectrics