The term photonic crystals appears because of the analogy between electron waves in crystals and the light waves in artificial periodic dielectric structures. During the recent years the investigation of one-, two-and three-dimensional periodic structures has attracted a widespread attention of the world optics community because of great potentiality of such structures in advanced applied optical fields. The interest in periodic structures has been stimulated by the fast development of semiconductor technology that now allows the fabrication of artificial structures, whose period is comparable with the wavelength of light in the visible and infrared ranges.

http://ieeexplore.ieee.org/iel5/6354/16969/00781867.pdf

Photonic crystals

http://ieeexplore.ieee.org/iel5/5610941/5624686/05624745.pdf

Power electronics

Digital processing of speech signals

Introduction to Electromagnetic Compatibility

Antenna Theory And Design

A 2.45-GHz rectifying antenna (rectenna) using a compact dual circularly polarized (DCP) patch antenna with an RF-dc power conversion part is presented. The DCP antenna is coupled to a microstrip line by an aperture in the ground plane and includes a bandpass filter for harmonic rejections. It exhibits a measured bandwidth of 2100 MHz (10 dB return loss) and a 705-MHz CP bandwidth (3 dB axial ratio). The maximum efficiency and dc voltage are respectively equal to 63% and 2.82 V over a resistive load of 1600 Ω for a power density of 0.525 mW/cm2.

A Dual Circularly Polarized 2.45-GHz Rectenna for Wireless Power Transmission

In this letter, a design of a beam-sweeping antenna using a new active frequency selective surface (FSS) is presented. The active FSS is composed of a steerable hybrid element that allows the control of radiation characteristics of the proposed antenna. The design is composed of an active cylindrical FSS structure containing PIN diodes and is divided into 10 equal columns. This design contains a simple dipole that is located in the center and surrounded by a cylindrical active FSS. The beam-sweeping of the antenna is produced by switching the PIN diodes between the on and off states. The antenna operates at 1.8 GHz and covers all azimuth angles in 10 steps with a maximum measured gain of 9.1 dBi. This beam-switching antenna can be used in the base stations of wireless communication systems.

Beam-Switching Antenna With a New Reconfigurable Frequency Selective Surface

This paper proposes a novel behavioral model for multiple-input single-output (MISO) and multiple-input multiple-output (MIMO) nonlinear transmitters based on multivariable polynomials (MVPs). The main source of nonlinearity in these transmitters is the RF power amplifier, which is commonly modeled using polynomial models. The proposed MVP model is capable of handling the nonlinear effects of the RF transmitters, as well as the linear and nonlinear crosstalk between the input signals. At the same time, the developed model was optimized for computing efficiency without compromising its accuracy. The model was tested for MISO and MIMO wireless transmitters. The simulations and measurement results revealed that the proposed model gives excellent accuracy when modeling MIMO transmitters with different branch coupling factors.

Behavioral Modeling of MIMO Nonlinear Systems With Multivariable Polynomials

RF performance of a 200-mm commercial-enhanced signal integrity high resistivity silicon-on-insulator (eSI HR-SOI) substrate is investigated and compared with its counterpart HR-SOI wafer. By measuring coplanar waveguide lines and substrate crosstalk structures, it is demonstrated that losses are completely suppressed leading to virtually lossless linear substrate. Moreover, a reduction of the second harmonic distortion by more than 25 dB is measured on eSI HR-SOI wafer compared with HR-SOI. Excellent matching between experimental dc and RF characteristics of fully depleted SOI MOSFETs measured on top of HR-SOI and eSI HR-SOI is demonstrated. Furthermore, digital substrate noise is reduced by more than 25 dB on eSI HR-SOI compared with HR-SOI, when injected noise varies from 500 kHz to 50 MHz. The eSI HR-SOI substrate is fully compatible with the CMOS process and could be considered as a promising solution for the RF front-end-modules integration and system-on-chip applications.

RF Performance of SOI CMOS Technology on Commercial 200-mm Enhanced Signal Integrity High Resistivity SOI Substrate

In this paper we aim at comparing the static and RF performances of passive and active fully-depleted (FD) SOI MOSFETs fabricated on top of either a standard or a trap-rich HR-SOI UNIBOND wafer both provided by SOITEC.

Ali Gharsallah

Papers

A Dual Circularly Polarized 2.45-GHz Rectenna for Wireless Power Transmission

Beam-Switching Antenna With a New Reconfigurable Frequency Selective Surface

Behavioral Modeling of MIMO Nonlinear Systems With Multivariable Polynomials

RF Performance of SOI CMOS Technology on Commercial 200-mm Enhanced Signal Integrity High Resistivity SOI Substrate

RF SOI CMOS technology on commercial trap-rich high resistivity SOI wafer