An overview is presented of the current state-of-the-art in silicon nanophotonic ring resonators. Basic theory of ring resonators is discussed, and applied to the peculiarities of submicron silicon photonic wire waveguides: the small dimensions and tight bend radii, sensitivity to perturbations and the boundary conditions of the fabrication processes. Theory is compared to quantitative measurements. Finally, several of the more promising applications of silicon ring resonators are discussed: filters and optical delay lines, label-free biosensors, and active rings for efficient modulators and even light sources.

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Silicon microring resonators

Optical frequency combs provide equidistant frequency markers in the infrared, visible and ultraviolet, and can be used to link an unknown optical frequency to a radio or microwave frequency reference. Since their inception, frequency combs have triggered substantial advances in optical frequency metrology and precision measurements and in applications such as broadband laser-based gas sensing and molecular fingerprinting. Early work generated frequency combs by intra-cavity phase modulation; subsequently, frequency combs have been generated using the comb-like mode structure of mode-locked lasers, whose repetition rate and carrier envelope phase can be stabilized. Here we report a substantially different approach to comb generation, in which equally spaced frequency markers are produced by the interaction between a continuous-wave pump laser of a known frequency with the modes of a monolithic ultra-high-Q microresonator via the Kerr nonlinearity. The intrinsically broadband nature of parametric gain makes it possible to generate discrete comb modes over a 500-nm-wide span (approximately 70 THz) around 1,550 nm without relying on any external spectral broadening. Optical-heterodyne-based measurements reveal that cascaded parametric interactions give rise to an optical frequency comb, overcoming passive cavity dispersion. The uniformity of the mode spacing has been verified to within a relative experimental precision of 7.3 x 10(-18). In contrast to femtosecond mode-locked lasers, this work represents a step towards a monolithic optical frequency comb generator, allowing considerable reduction in size, complexity and power consumption. Moreover, the approach can operate at previously unattainable repetition rates, exceeding 100 GHz, which are useful in applications where access to individual comb modes is required, such as optical waveform synthesis, high capacity telecommunications or astrophysical spectrometer calibration.

Optical frequency comb generation from a monolithic microresonator

The series of precisely spaced, sharp spectral lines that form an optical frequency comb is enabling unprecedented measurement capabilities and new applications in a wide range of topics that include precision spectroscopy, atomic clocks, ultracold gases, and molecular fingerprinting. A new optical frequency comb generation principle has emerged that uses parametric frequency conversion in high resonance quality factor (Q) microresonators. This approach provides access to high repetition rates in the range of 10 to 1000 gigahertz through compact, chip-scale integration, permitting an increased number of comb applications, such as in astronomy, microwave photonics, or telecommunications. We review this emerging area and discuss opportunities that it presents for novel technologies as well as for fundamental science.

http://science.sciencemag.org/content/sci/332/6029/555.full.pdf

Microresonator-Based Optical Frequency Combs

The silicon chip has been the mainstay of the electronics industry for the last 40 years and has revolutionized the way the world operates. Today, a silicon chip the size of a fingernail contains nearly 1 billion transistors and has the computing power that only a decade ago would take up an entire room of servers. As the relentless pursuit of Moore's law continues, and Internet-based communication continues to grow, the bandwidth demands needed to feed these devices will continue to increase and push the limits of copper-based signaling technologies. These signaling limitations will necessitate optical-based solutions. However, any optical solution must be based on low-cost technologies if it is to be applied to the mass market. Silicon photonics, mainly based on SOI technology, has recently attracted a great deal of attention. Recent advances and breakthroughs in silicon photonic device performance have shown that silicon can be considered a material onto which one can build optical devices. While significant efforts are needed to improve device performance and commercialize these technologies, progress is moving at a rapid rate. More research in the area of integration, both photonic and electronic, is needed. The future is looking bright. Silicon photonics could provide low-cost opto-electronic solutions for applications ranging from telecommunications down to chip-to-chip interconnects, as well as emerging areas such as optical sensing technology and biomedical applications. The ability to utilize existing CMOS infrastructure and manufacture these silicon photonic devices in the same facilities that today produce electronics could enable low-cost optical devices, and in the future, revolutionize optical communications

http://ieeexplore.ieee.org/iel5/6668/34347/01638290.pdf

Silicon photonics

We review the current status of single-photon-source and single-photon-detector technologies operating at wavelengths from the ultraviolet to the infrared. We discuss applications of these technologies to quantum communication, a field currently driving much of the development of single-photon sources and detectors.

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Invited review article: Single-photon sources and detectors

The development of silicon-compatible optical components that simultaneously amplify and process a broad range of wavelength channels is critical for future data communication technology based on photonic chips. Until now, such devices have only been able to amplify a single wavelength channel. Now, using nanoscale silicon waveguides designed for the purpose, Foster et al. have achieved broadband amplification. The key is the exploitation of a nonlinear optical effect known as four-wave mixing. This process can also be used for other all-optical functions previously only possible in extended lengths of optical fibre. Phase-matched four-wave mixing can take place with high efficiency in a suitably designed silicon waveguide — this advance could allow for the implementation of dense wavelength channels for optical processing in an all-silicon photonic chip. Developing an optical amplifier on silicon is essential for the success of silicon-on-insulator (SOI) photonic integrated circuits. Recently, optical gain with a 1-nm bandwidth was demonstrated using the Raman effect1,2,3,4,5,6,7,8,9, which led to the demonstration of a Raman oscillator10,11, lossless optical modulation12 and optically tunable slow light13. A key strength of optical communications is the parallelism of information transfer and processing onto multiple wavelength channels. However, the relatively narrow Raman gain bandwidth only allows for amplification or generation of a single wavelength channel. If broad gain bandwidths were to be demonstrated on silicon, then an array of wavelength channels could be generated and processed, representing a critical advance for densely integrated photonic circuits. Here we demonstrate net on/off gain over a wavelength range of 28 nm through the optical process of phase-matched four-wave mixing in suitably designed SOI channel waveguides. We also demonstrate wavelength conversion in the range 1,511–1,591 nm with peak conversion efficiencies of +5.2 dB, which represents more than 20 times improvement on previous four-wave-mixing efficiencies in SOI waveguides14,15,16,17. These advances allow for the implementation of dense wavelength division multiplexing in an all-silicon photonic integrated circuit. Additionally, all-optical delays18, all-optical switches19, optical signal regenerators20 and optical sources for quantum information technology21, all demonstrated using four-wave mixing in silica fibres, can now be transferred to the SOI platform.

Broad-band optical parametric gain on a silicon photonic chip

We review recent research on nonlinear optical interactions in waveguides with sub-micron transverse dimensions, which are termed photonic nanowires. Such nanowaveguides, fabricated from glasses or semiconductors, provide the maximal confinement of light for index guiding structures enabling large enhancement of nonlinear interactions and group-velocity dispersion engineering. The combination of these two properties make photonic nanowires ideally suited for many nonlinear optical applications including the generation of single-cycle pulses and optical processing with sub-mW powers.

Nonlinear optics in photonic nanowires

We present the first experimental demonstration of anomalous group-velocity dispersion (GVD) in silicon waveguides across the telecommunication bands. We show that the GVD in such waveguides can be tuned from -2000 to 1000 ps/(nm·km) by tailoring the cross-sectional size and shape of the waveguide.

Tailored anomalous group-velocity dispersion in silicon channel waveguides

To meet the increasing demand for higher capacity in optical communications, signal transmission at higher modulation rates and over a broader wavelength range will be required. Signal degradation in the optical channel caused by dispersion, nonlinearity and noise becomes a critical issue as data rates increase. Thus, it is highly desirable to develop broadband, high-speed regeneration devices1. Recent advances in silicon-on-insulator photonic devices offer the potential for highly integrated, robust opto–electronic architectures, and optical processes such as amplification2,3,4, wavelength conversion5,6,7 and amplitude modulation8,9 have already been demonstrated in such structures. In this work, we demonstrate two regeneration schemes using low-power four-wave mixing in a silicon nanowaveguide and compensate for the effects of poor extinction ratio, dispersive broadening and timing jitter. This capability further expands the range of optical functions that can be incorporated into silicon-compatible photonic devices offering a broadband and integrated solution for regeneration.

Signal regeneration using low-power four-wave mixing on silicon chip

.We experimentally study the generation of correlated pairs of photons through four-wave mixing (FWM) in embedded silicon waveguides. The waveguides, which are designed to exhibit anomalous group-velocity dispersion at wavelengths near 1555 nm, allow phase matched FWM and thus efficient pair-wise generation of non-degenerate signal and idler photons. Photon counting measurements yield a coincidence-to-accidental ratio (CAR) of around 25 for a signal (idler) photon production rate of about 0.05 per pulse. We characterize the variation in CAR as a function of pump power and pump-to-sideband wavelength detuning. These measurements represent a first step towards the development of tools for quantum information processing which are based on CMOS-compatible, silicon-on-insulator technology.

Amy C. Turner

Papers

Broad-band optical parametric gain on a silicon photonic chip

Nonlinear optics in photonic nanowires

Tailored anomalous group-velocity dispersion in silicon channel waveguides

Signal regeneration using low-power four-wave mixing on silicon chip

Generation of correlated photons in nanoscale silicon waveguides.