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Andreas Görling
Researcher at Technische Universität München
Publications - 37
Citations - 3964
Andreas Görling is an academic researcher from Technische Universität München. The author has contributed to research in topics: Kohn–Sham equations & Density functional theory. The author has an hindex of 25, co-authored 37 publications receiving 3726 citations. Previous affiliations of Andreas Görling include University of Bonn & Tulane University.
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Generalized Kohn-Sham schemes and the band-gap problem
TL;DR: The corresponding generalized Kohn-Sham eigenvalue gaps are shown to incorporate part of the discontinuity D xc of the exchange-correlation potential of standard KohnSham theory, leading to band gaps far better than those of local-density approximation.
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Exact Kohn-Sham scheme based on perturbation theory
Andreas Görling,Mel Levy +1 more
TL;DR: An exact formal Kohn-Sham scheme is derived with the help of perturbation theory through the introduction of a basis set and an exact basis set ``exchange-only'' method is obtained.
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Density-functional theory for excited states
TL;DR: In this article, a Kohn-Sham formalism for the treatment of excited states within the density-functional theory (DFT) is presented, and explicit expressions for these functionals are derived by generalizing a recent DFT perturbation theory.
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Exact exchange Kohn-Sham formalism applied to semiconductors
TL;DR: In this paper, the Kohn-Sham method is used to calculate lattice constants, cohesive energies, Kohn Sham eigenvalues, dielectric functions, and effective masses of various zinc-blende semiconductors (Si, Ge, C, SiC, GaAs, AlAs, GaN, and AlN).
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Exact Kohn-Sham Exchange Potential in Semiconductors
TL;DR: In this paper, a new Kohn-Sham method that treats exchange interactions within density functional theory exactly is applied to Si, diamond, GaN, and InN and shows that the exchange contribution to the derivative discontinuity of the exchange-correlation potential is very large (of the order of 5-10 eV).