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Anja Dobrich
Researcher at Technische Universität Ilmenau
Publications - 30
Citations - 953
Anja Dobrich is an academic researcher from Technische Universität Ilmenau. The author has contributed to research in topics: Metalorganic vapour phase epitaxy & Silicon. The author has an hindex of 10, co-authored 30 publications receiving 852 citations. Previous affiliations of Anja Dobrich include Helmholtz-Zentrum Berlin & University of Cambridge.
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Journal ArticleDOI
Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency
Frank Dimroth,Matthias Grave,Paul Beutel,Ulrich Fiedeler,Christian Karcher,T.N.D. Tibbits,E. Oliva,Gerald Siefer,Michael Schachtner,A. Wekkeli,Andreas W. Bett,Rainer Krause,M. Piccin,Nicolas Blanc,Charlotte Drazek,Eric Guiot,Bruno Ghyselen,Thierry Salvetat,Aurélie Tauzin,Thomas Signamarcheix,Anja Dobrich,Thomas Hannappel,Klaus Schwarzburg +22 more
TL;DR: In this paper, a GaAs-based top tandem solar cell structure was bonded to an InP-based bottom tandem cell with a difference in lattice constant of 3.7%.
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Interplay of amorphous silicon disorder and hydrogen content with interface defects in amorphous/crystalline silicon heterojunctions
TL;DR: In this paper, the authors analyzed the dependence of the interface defect density Dit in amorphous/crystalline silicon heterojunctions on the microscopic properties of ultrathin (10 nm) undoped a-Si:H passivation layers.
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Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory
Oliver Supplie,Oleksandr Romanyuk,Christian Koppka,Matthias Steidl,Andreas Nägelein,Agnieszka Paszuk,Lars Winterfeld,Anja Dobrich,Peter Kleinschmidt,Erich Runge,Thomas Hannappel +10 more
TL;DR: In this paper, the authors review the recent progress in metalorganic vapor phase epitaxy (MOVPE) growth of III-V-on-silicon heterostructures, preparation of the involved interfaces and fabrication of devices structures.
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Anomalous double-layer step formation on Si(100) in hydrogen process ambient
Sebastian Brückner,Sebastian Brückner,Henning Döscher,Henning Döscher,Peter Kleinschmidt,Oliver Supplie,Anja Dobrich,Thomas Hannappel,Thomas Hannappel +8 more
TL;DR: In this article, a Si(100) surfaces with anomalous atomic double-layer steps grown via chemical vapor deposition were prepared using scanning tunneling microscopy and low-energy electron diffraction.
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Surface preparation of Si(1 0 0) by thermal oxide removal in a chemical vapor environment
Henning Döscher,Sebastian Brückner,Anja Dobrich,Christian Höhn,Peter Kleinschmidt,Thomas Hannappel +5 more
TL;DR: In this paper, the preparation of Si(1.0.0) surfaces in chemical vapor environments suitable for subsequent epitaxial III-V integration by chemical vapor deposition (CVD) involving metal-organic precursors was investigated by surface sensitive instruments accessible through a dedicated sample transfer to ultra high vacuum (UHV).